- Hersteller :
- Maximum Operating Temperature :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Ausgewählter Filter :
3 Produkt
| Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Ein Angebot |
3,987
Verfügbar auf Lager
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Infineon / IR | MOSFET PLANAR_MOSFETS | 20 V, 20 V | SMD/SMT | SO-8 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel | 55 V, 55 V | 5.1 A, 5.1 A | 65 mOhms, 65 mOhms | 1 V, 1 V | 29 nC, 29 nC | Enhancement | |||
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Ein Angebot |
1,904
Verfügbar auf Lager
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Infineon Technologies | MOSFET N-Ch 55V 5A DSO-8 OptiMOS | 20 V, 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 55 V, 55 V | 5 A, 5 A | 31 mOhms, 31 mOhms | 1.2 V, 1.2 V | 26 nC, 26 nC | Enhancement | OptiMOS | ||
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Ein Angebot |
2,400
Verfügbar auf Lager
|
Infineon Technologies | MOSFET N-Ch 55V 5A DSO-8 OptiMOS | 20 V, 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 55 V, 55 V | 5 A, 5 A | 31 mOhms, 31 mOhms | 1.2 V, 1.2 V | 26 nC, 26 nC | Enhancement |
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