- Vgs - Gate-Source Voltage :
- Mounting Style :
- Package / Case :
- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Number of Channels :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Ausgewählter Filter :
5 Produkt
| Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
Ein Angebot |
3,942
Verfügbar auf Lager
|
Diodes Incorporated | MOSFET MOSFET BVDSS: | +/- 8 V, +/- 8 V | SMD/SMT | U-DFN2020-B-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 12 V, - 12 V | 5.1 A, - 3.9 A | 17 mOhms, 37 mOhms | 400 mV, - 1 V | 23.1 nC, 20.8 nC | Enhancement | ||
|
|
Ein Angebot |
6,000
Verfügbar auf Lager
|
Micro Commercial Components (MCC) | MOSFET 6A, 4.1A , N+P Chann Mosfet | +/- 12 V, +/- 12 V | SMD/SMT | DFN2020-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 12 V, - 12 V | 6 A, - 4.1 A | 24 mOhms, 45 mOhms | 500 mV, - 900 mV | 12 nC, 9 nC | Enhancement | ||
|
|
Ein Angebot |
126
Verfügbar auf Lager
|
Advanced Linear Devices | MOSFET Dual P&N-Ch. Pair | 10.6 V | Through Hole | PDIP-14 | 0 C | + 70 C | Tube | 4 Channel | Si | N-Channel, P-Channel | 12 V, - 12 V | 40 mA, - 16 mA | 50 Ohms, 180 Ohms | 400 mV, - 400 mV | Enhancement | |||
|
|
Ein Angebot |
12
Verfügbar auf Lager
|
Advanced Linear Devices | MOSFET Dual P&N-Ch. Pair | 10.6 V | SMD/SMT | SOIC-14 | 0 C | + 70 C | Tube | 4 Channel | Si | N-Channel, P-Channel | 12 V, - 12 V | 40 mA, - 16 mA | 50 Ohms, 180 Ohms | 400 mV, - 400 mV | Enhancement | |||
|
|
|
Ein Angebot |
197
Verfügbar auf Lager
|
Advanced Linear Devices | MOSFET Dual P&N-Ch. Pair | 10.6 V | Through Hole | PDIP-14 | 0 C | + 70 C | Tube | 4 Channel | Si | N-Channel, P-Channel | 12 V, - 12 V | 4.8 mA, - 2 mA | 350 Ohms, 1.2 kOhms | 400 mV, - 400 mV | Enhancement |
1 / 1 Seite
