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| Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | |
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siehe | Nexperia | MOSFET N-ch 60V 3.0 mOhm MOSFET | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 54 V, 60 V | 100 A | 2.4 mOhms | 2 V to 4 V | 130 nC |
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