- Hersteller :
- Package / Case :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
4 Produkt
| Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
Ein Angebot |
2,975
Verfügbar auf Lager
|
Vishay / Siliconix | MOSFET Dual P-Channel 30V TSOP-6 | +/- 20 V, +/- 20 V | SMD/SMT | TSOP-6 | - 55 C | + 175 C | Reel | 2 Channel | Si | P-Channel | - 30 V, - 30 V | - 2.5 A, - 2.5 A | 0.14 Ohms, 0.14 Ohms | - 1.5 V, - 1.5 V | 11.1 nC, 11.1 nC | Enhancement | |||
|
|
Ein Angebot |
3,000
Verfügbar auf Lager
|
Vishay Semiconductors | MOSFET Dual P-Channel 30V AEC-Q101 Qualified | +/- 20 V, +/- 20 V | SMD/SMT | PowerPAK-SO-8L-4 | - 55 C | + 175 C | Reel | 2 Channel | Si | P-Channel | - 30 V, - 30 V | - 30 A, - 30 A | 0.014 Ohms, 0.014 Ohms | - 2.5 V, - 2.5 V | 50 nC, 50 nC | Enhancement | TrenchFET | ||
|
|
siehe | Vishay / Siliconix | MOSFET Dual P-Chnl 30-V D-S AEC-Q101 Qualified | +/- 20 V, +/- 20 V | SMD/SMT | SO-8 | - 55 C | + 175 C | Reel | 2 Channel | Si | P-Channel | - 30 V, - 30 V | - 5 A, - 5 A | 0.056 Ohms, 0.056 Ohms | - 2.5 V, - 2.5 V | 15 nC, 15 nC | Enhancement | TrenchFET | |||
|
|
|
siehe | Vishay / Siliconix | MOSFET Dual P-Chnl 30-V D-S AEC-Q101 Qualified | +/- 20 V, +/- 20 V | SMD/SMT | SO-8 | - 55 C | + 175 C | Reel | 2 Channel | Si | P-Channel | - 30 V, - 30 V | - 7.5 A, - 7.5 A | 0.028 Ohms, 0.028 Ohms | - 2.5 V, - 2.5 V | 30 nC, 30 nC | Enhancement | TrenchFET |
1 / 1 Seite
