- Hersteller :
- Mounting Style :
- Package / Case :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Ausgewählter Filter :
20 Produkt
| Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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Ein Angebot |
2,380
Verfügbar auf Lager
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STMicroelectronics | MOSFET N-channel 525 V 6.3 A DPAK | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 525 V | 6 A | 850 mOhms | 33 nC | ||||
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Ein Angebot |
2,223
Verfügbar auf Lager
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STMicroelectronics | MOSFET N-channel 525 V 4.4 A DPAK TO-220F | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 525 V | 4.4 A | 1.28 Ohms | |||||
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Ein Angebot |
1,748
Verfügbar auf Lager
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STMicroelectronics | MOSFET N-Ch 525V 2.5A 2.1 Ohm SuperMESH3 | 30 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 525 V | 2.5 A | 2.1 Ohms | 3.75 V | 11 nC | |||||
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Ein Angebot |
2,375
Verfügbar auf Lager
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STMicroelectronics | MOSFET N-CH 525 V 4.4 A SuperMESH3 | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 525 V | 4.4 A | 1.2 Ohms | 17 nC | ||||
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Ein Angebot |
920
Verfügbar auf Lager
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STMicroelectronics | MOSFET N-channel 525 V 6.3 A PAK D | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 525 V | 6 A | 850 mOhms | 33 nC | ||||
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siehe | Toshiba | MOSFET N-Ch MOS 12A 525V 45W 1350pF .58 | Through Hole | TO-220FP-3 | 1 Channel | Si | N-Channel | 525 V | 12 A | 580 mOhms | ||||||||||
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siehe | Toshiba | MOSFET N-Ch MOS 6A 525V 35W 600pF 1.3 Ohm | Through Hole | TO-220FP-3 | 1 Channel | Si | N-Channel | 525 V | 6 A | 1.3 Ohms | ||||||||||
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siehe | Toshiba | MOSFET N-Ch MOS 5A 525V 35W 540pF 1.5 OhM | Through Hole | TO-220FP-3 | 1 Channel | Si | N-Channel | 525 V | 5 A | 1.5 Ohms | ||||||||||
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Ein Angebot |
2,461
Verfügbar auf Lager
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STMicroelectronics | MOSFET N-channel 525 V MDMesh | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 525 V | 5 A | 1 Ohms | 25 nC | ||||
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siehe | STMicroelectronics | MOSFET N-Ch 525V 2.1 Ohm 4.0A IPAK | Through Hole | TO-251-3 | Tube | 1 Channel | Si | N-Channel | 525 V | 4 A | 2.1 Ohms | |||||||||
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siehe | Toshiba | MOSFET N-Ch MOS 4A 525V 35W 490pF 1.7 Ohm | Through Hole | TO-220FP-3 | 1 Channel | Si | N-Channel | 525 V | 4 A | 1.7 Ohms | ||||||||||
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siehe | Toshiba | MOSFET N-Ch MOS 6A 525V 100W 600pF 1.3 Ohm | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 525 V | 6 A | 1.3 Ohms | |||||||||
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siehe | Toshiba | MOSFET N-Ch MOS 5A 525V 80W 540pF 1.5Ohm | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 525 V | 5 A | 1.5 Ohms | |||||||||
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siehe | ROHM Semiconductor | MOSFET LO CURR HI EFF MOSFT HI BREAKDWN RESI... | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 525 V | 7 A | 780 mOhms | 2.5 V | 13 nC | Enhancement | |||
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Ein Angebot |
2,922
Verfügbar auf Lager
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STMicroelectronics | MOSFET N-Ch 525V 1.2 Ohm 4.4A SuperMESH 3 | 30 V | Through Hole | TO-251-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 525 V | 4.4 A | 1.5 Ohms | 17 nC | Enhancement | |||
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siehe | STMicroelectronics | MOSFET N-Ch 525V 1.2 ohm 4.4 A SuperMESH3 | 3 V | SMD/SMT | TO-252-3 | + 150 C | Reel | 1 Channel | Si | N-Channel | 525 V | 3.8 A | 1.95 Ohms | 4.5 V | 14 nC | |||||
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siehe | STMicroelectronics | MOSFET N-Ch 525V 1.2 Ohm 4.4A SuperMESH 3 | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 525 V | 4.4 A | 1.5 Ohms | 17 nC | Enhancement | ||||
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siehe | STMicroelectronics | MOSFET N-Ch 525V 0.95 Ohm 6A SuperFREDmesh3 | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 525 V | 6 A | 1.15 Ohms | 33 nC | Enhancement | ||||
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siehe | STMicroelectronics | MOSFET N-Ch 525V 2.1 Ohm 2.5A SuperMESH 3 | 30 V | Through Hole | TO-251-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 525 V | 2.5 A | 2.6 Ohms | 11 nC | Enhancement | ||||
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Ein Angebot |
953
Verfügbar auf Lager
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STMicroelectronics | MOSFET N-channel 525 V 6.3 A DPAK D | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 525 V | 6 A | 850 mOhms | 33 nC |
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