- Hersteller :
- Vgs - Gate-Source Voltage :
- Package / Case :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Ausgewählter Filter :
2 Produkt
Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Ein Angebot |
21,269
Verfügbar auf Lager
|
Diodes Incorporated | MOSFET 60 / -50V 200mW | 20 V, 20 V | SMD/SMT | SOT-363-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 60 V, - 50 V | 115 mA | 4.4 Ohms | Enhancement | |||||
|
Ein Angebot |
4,000
Verfügbar auf Lager
|
Nexperia | MOSFET 60/50V, 330/170 mA N/P-ch Trench MOSFET | +/- 20 V, +/- 20 V | SMD/SMT | SOT-666-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 60 V, - 50 V | 5 A | 1 Ohms | 1.6 V, - 1.6 V | 0.2 nC, 0.12 nC | Enhancement |
1 / 1 Seite