- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Id - Continuous Drain Current :
-
- 0.85 A, - 0.85 A (1)
- 1.03 A, - 700 mA (3)
- 1.5 A, - 1.5 A (2)
- 1.6 A, - 1.5 A (1)
- 1.9 A, - 1.2 A (1)
- 100 mA, 100 mA (1)
- 180 mA, - 100 mA (1)
- 2.4 A, - 1.7 A (1)
- 2.5 A, 2.4 A (1)
- 2.5 A, 2.5 A (1)
- 3.57 A, - 2.5 A (1)
- 4 A, - 4 A (1)
- 4.7 A, - 3.2 A (1)
- 5.1 A, - 3.2 A (2)
- 5.2 A, - 4.3 A (1)
- 5.5 A, - 5 A (1)
- 500 mA, - 330 mA (1)
- 600 mA, 500 mA (1)
- 950 mA, 530 mA (3)
- Rds On - Drain-Source Resistance :
-
- 0.049 Ohms, 0.14 Ohms (1)
- 0.15 Ohms, 0.5 Ohms (1)
- 108 mOhms, 102 mOhms (2)
- 108 mOhms, 157 mOhms (1)
- 135 mOhms, 270 mOhms (1)
- 140 mOhms, 360 mOhms (1)
- 2.5 Ohms, 2.5 Ohms (1)
- 20 Ohms, 44 Ohms (1)
- 23 mOhms, 59 mOhms (1)
- 247 mOhms, 430 mOhms (1)
- 266 mOhms, 745 mOhms (3)
- 30 mOhms, 42 mOhms (1)
- 300 Ohms, 670 mOhms (1)
- 41 mOhms, 97 mOhms (2)
- 460 mOhms, 950 mOhms (1)
- 470 mOhms, 1.02 Ohms (1)
- 500 mOhms, 1 Ohms (2)
- 52 mOhms, 49 mOhms (1)
- 70 mOhms, 140 mOhms (1)
- 80 mOhms, 100 mOhms (1)
- Vgs th - Gate-Source Threshold Voltage :
-
- 0.45 V, - 1.5 V (1)
- 0.6 V, - 1.5 V (1)
- 0.7 V, - 0.7 V (1)
- 0.9 V, - 1 V (2)
- 300 mV, - 1 V (2)
- 300 mV, - 300 mV (1)
- 350 mV, - 1 V (1)
- 350 mV, - 1.4 V (1)
- 350 mV, - 300 mV (1)
- 400 mV, - 1.3 V (1)
- 400 mV, - 400 mV (1)
- 400 mV, - 500 mV (1)
- 450 mV, - 950 mV (1)
- 500 mV, - 1 V (1)
- 500 mV, - 1.5 V (1)
- 700 mV, - 1.2 V (5)
- 800 mV, - 1.4 V (2)
- Qg - Gate Charge :
-
- 0.5 nC (2)
- 0.93 nC, 1 nC (1)
- 1.23 nC, 1.2 nC (1)
- 15 nC, 18 nC (1)
- 2.5 nC, 3.5 nC (1)
- 2.8 nC, - 4.5 nC (2)
- 20 nC, 22 nC (1)
- 3.6 nC, 12 nC (1)
- 3.6 nC, 6.7 nC (1)
- 3.6 nC, 6.74 nC (1)
- 340 pC, - 400 pC (3)
- 4 nC, 6.5 nC (1)
- 5.3 nC (1)
- 500 pC, 850 pC (1)
- 7.5 nC, 6.4 nC (1)
- 700 pC, 2.1 nC (1)
- 730 pC, - 3 nC (2)
- Ausgewählter Filter :
25 Produkt
| Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
Ein Angebot |
15,119
Verfügbar auf Lager
|
Infineon Technologies | MOSFET SMALL SIGNAL+P-CH | +/- 12 V, +/- 12 V | SMD/SMT | TSOP-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 20 V, - 20 V | 1.5 A, - 1.5 A | 108 mOhms, 102 mOhms | 700 mV, - 1.2 V | 730 pC, - 3 nC | Enhancement | ||
|
|
Ein Angebot |
3,823
Verfügbar auf Lager
|
Infineon Technologies | MOSFET SMALL SIGNAL+P-CH | +/- 12 V, +/- 12 V | SMD/SMT | TSDSON-8 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 20 V, - 20 V | 5.1 A, - 3.2 A | 41 mOhms, 97 mOhms | 800 mV, - 1.4 V | 2.8 nC, - 4.5 nC | Enhancement | ||
|
|
Ein Angebot |
10,463
Verfügbar auf Lager
|
Infineon / IR | MOSFET MOSFT DUAL N/PCh 20V 4.3A | +/- 12 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 20 V, - 20 V | 5.2 A, - 4.3 A | 70 mOhms, 140 mOhms | 0.7 V, - 0.7 V | 20 nC, 22 nC | |||
|
|
Ein Angebot |
3,147
Verfügbar auf Lager
|
Infineon Technologies | MOSFET MOSFT DUAL N/PCh 20V 2.4A Micro 8 | 12 V | SMD/SMT | Micro-8 | Reel | 2 Channel | Si | N-Channel, P-Channel | 20 V, - 20 V | 2.4 A, - 1.7 A | 135 mOhms, 270 mOhms | 5.3 nC | ||||||
|
|
|
Ein Angebot |
5,828
Verfügbar auf Lager
|
Infineon Technologies | MOSFET SMALL SIGNAL+P-CH | +/- 12 V, +/- 12 V | SMD/SMT | TSOP-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 20 V, - 20 V | 1.5 A, - 1.5 A | 108 mOhms, 102 mOhms | 700 mV, - 1.2 V | 730 pC, - 3 nC | Enhancement | ||
|
|
Ein Angebot |
11,066
Verfügbar auf Lager
|
Infineon Technologies | MOSFET N and P-Ch 20V 950mA -530mA SOT-363-6 | +/- 12 V, +/- 12 V | SMD/SMT | SOT-363-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 20 V, - 20 V | 950 mA, 530 mA | 266 mOhms, 745 mOhms | 700 mV, - 1.2 V | 340 pC, - 400 pC | Enhancement | ||
|
|
Ein Angebot |
4,941
Verfügbar auf Lager
|
Nexperia | MOSFET 20 V, complementary N/P-channel Trench | 8 V, 8 V | SMD/SMT | DFN1010B-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 20 V, - 20 V | 600 mA, 500 mA | 470 mOhms, 1.02 Ohms | 450 mV, - 950 mV | 700 pC, 2.1 nC | Enhancement | ||
|
|
Ein Angebot |
7,424
Verfügbar auf Lager
|
Infineon Technologies | MOSFET N and P-Ch 20V 950mA -530mA SOT-363-6 | +/- 12 V, +/- 12 V | SMD/SMT | SOT-363-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 20 V, - 20 V | 950 mA, 530 mA | 266 mOhms, 745 mOhms | 700 mV, - 1.2 V | 340 pC, - 400 pC | Enhancement | ||
|
|
|
Ein Angebot |
3,415
Verfügbar auf Lager
|
Infineon Technologies | MOSFET N and P-Ch 20V 950mA -530mA SOT-363-6 | +/- 12 V, +/- 12 V | SMD/SMT | SOT-363-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 20 V, - 20 V | 950 mA, 530 mA | 266 mOhms, 745 mOhms | 700 mV, - 1.2 V | 340 pC, - 400 pC | Enhancement | ||
|
|
Ein Angebot |
8,966
Verfügbar auf Lager
|
Diodes Incorporated | MOSFET Comp Pair Enh FET 20Vds 0.58W 37pF | +/- 12 V, +/- 8 V | SMD/SMT | SOT-563-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 20 V, - 20 V | 1.03 A, - 700 mA | 300 Ohms, 670 mOhms | 500 mV, - 1 V | 500 pC, 850 pC | Enhancement | ||
|
|
|
Ein Angebot |
965
Verfügbar auf Lager
|
Diodes Incorporated | MOSFET Comp Pair Enh FET 20Vdss 12Vgss 0.45W | 4.5 V, - 4.5 V | SMD/SMT | SOT-563-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 20 V, - 20 V | 1.03 A, - 700 mA | 500 mOhms, 1 Ohms | 0.9 V, - 1 V | 0.5 nC | Enhancement | ||
|
|
Ein Angebot |
5,485
Verfügbar auf Lager
|
ROHM Semiconductor | MOSFET 1.5V Drive Nch+Pch MOSFET | +/- 10 V, +/- 10 V | SMD/SMT | TSST-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 20 V, - 20 V | 2.5 A, 2.5 A | 52 mOhms, 49 mOhms | 300 mV, - 1 V | 3.6 nC, 12 nC | Enhancement | ||
|
|
Ein Angebot |
9,546
Verfügbar auf Lager
|
ROHM Semiconductor | MOSFET 1.2V Drive Nch+Pch MOSFET | +/- 8 V, +/- 10 V | SMD/SMT | VMT-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 20 V, - 20 V | 100 mA, 100 mA | 2.5 Ohms, 2.5 Ohms | 300 mV, - 1 V | Enhancement | |||
|
|
Ein Angebot |
4,255
Verfügbar auf Lager
|
Toshiba | MOSFET Small-signal MOSFET 2-in-1 | +/- 10 V, +/- 8 V | SMD/SMT | ES6-6 | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 20 V, - 20 V | 500 mA, - 330 mA | 460 mOhms, 950 mOhms | 350 mV, - 1 V | 1.23 nC, 1.2 nC | Enhancement | |||
|
|
Ein Angebot |
2,700
Verfügbar auf Lager
|
Panasonic | MOSFET SC, Nch+Pch MOS FET Dual, DCDC Converter | +/- 10 V, +/- 10 V | SMD/SMT | SMD-6 | - 40 C | + 85 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 20 V, - 20 V | 1.9 A, - 1.2 A | 80 mOhms, 100 mOhms | 400 mV, - 1.3 V | Enhancement | |||
|
|
Ein Angebot |
2,971
Verfügbar auf Lager
|
Toshiba | MOSFET Small-signal MOSFET 2 in 1 Nch+Pch ID:4A | +/- 8 V, +/- 12 V | SMD/SMT | uDFN-6 | - | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 20 V, - 20 V | 4 A, - 4 A | 108 mOhms, 157 mOhms | 400 mV, - 500 mV | 3.6 nC, 6.74 nC | Enhancement | ||
|
|
|
Ein Angebot |
970
Verfügbar auf Lager
|
ROHM Semiconductor | MOSFET 1.5V Drive Nch+Pch MOSFET | +/- 10 V, +/- 10 V | SMD/SMT | TSST-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 20 V, - 20 V | 2.5 A, 2.4 A | 140 mOhms, 360 mOhms | 300 mV, - 300 mV | 3.6 nC, 6.7 nC | Enhancement | ||
|
|
Ein Angebot |
3,000
Verfügbar auf Lager
|
ROHM Semiconductor | MOSFET 20V Nch+Pch Si MOSFET | +/- 8 V, +/- 8 V | SMD/SMT | HUML2020L-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 20 V, - 20 V | 5.5 A, - 5 A | 30 mOhms, 42 mOhms | 500 mV, - 1.5 V | 4 nC, 6.5 nC | Enhancement | ||
|
|
Ein Angebot |
3,000
Verfügbar auf Lager
|
Toshiba | MOSFET Small Signal MOSFET | +/- 10 V, +/- 8 V | SMD/SMT | UF6-6 | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 20 V, - 20 V | 1.6 A, - 1.5 A | 247 mOhms, 430 mOhms | 350 mV, - 300 mV | 7.5 nC, 6.4 nC | Enhancement | |||
|
|
|
siehe | Infineon Technologies | MOSFET SMALL SIGNAL+P-CH | +/- 12 V, +/- 12 V | SMD/SMT | TSDSON-8 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 20 V, - 20 V | 5.1 A, - 3.2 A | 41 mOhms, 97 mOhms | 800 mV, - 1.4 V | 2.8 nC, - 4.5 nC | Enhancement | |||
|
|
|
siehe | Vishay / Siliconix | MOSFET N Ch 20Vds 8Vgs AEC-Q101 Qualified | +/- 8 V, +/- 8 V | SMD/SMT | SOT-363-6 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 20 V, - 20 V | 0.85 A, - 0.85 A | 0.15 Ohms, 0.5 Ohms | 0.45 V, - 1.5 V | 0.93 nC, 1 nC | Enhancement | |||
|
|
siehe | Toshiba | MOSFET Small Signal MOSFET | +/- 10 V, +/- 10 V | SMD/SMT | ES6-6 | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 20 V, - 20 V | 180 mA, - 100 mA | 20 Ohms, 44 Ohms | 400 mV, - 400 mV | Enhancement | |||||
|
|
Ein Angebot |
2,915
Verfügbar auf Lager
|
Diodes Incorporated | MOSFET 20V Complementary 12Vgs 0.6mm ESD | +/- 12 V, +/- 12 V | SMD/SMT | U-DFN2020-B-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 20 V, - 20 V | 4.7 A, - 3.2 A | 23 mOhms, 59 mOhms | 350 mV, - 1.4 V | 15 nC, 18 nC | Enhancement | ||
|
|
|
siehe | Diodes Incorporated | MOSFET Comp Pair Enh FET 20Vdss 12Vgss 0.45W | 4.5 V, - 4.5 V | SMD/SMT | SOT-563-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 20 V, - 20 V | 1.03 A, - 700 mA | 500 mOhms, 1 Ohms | 0.9 V, - 1 V | 0.5 nC | Enhancement | |||
|
|
|
siehe | Vishay Semiconductors | MOSFET N Ch 20Vds 12Vgs AEC-Q101 Qualified | +/- 12 V, +/- 12 V | SMD/SMT | TSOP-6 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 20 V, - 20 V | 3.57 A, - 2.5 A | 0.049 Ohms, 0.14 Ohms | 0.6 V, - 1.5 V | 2.5 nC, 3.5 nC | Enhancement |
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