- Hersteller :
- Mounting Style :
- Package / Case :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Ausgewählter Filter :
16 Produkt
Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Channel Mode | |
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Ein Angebot |
1,725
Verfügbar auf Lager
|
Diodes Incorporated | MOSFET P-Chnl 450V | 20 V | Through Hole | TO-92-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 350 V | - 50 mA | 150 Ohms | Enhancement | |||
|
Ein Angebot |
5,500
Verfügbar auf Lager
|
Microchip Technology | MOSFET 350V 25Ohm | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 350 V | - 85 mA | 30 Ohms | Enhancement | |||
|
Ein Angebot |
1,486
Verfügbar auf Lager
|
Microchip Technology | MOSFET 350V 25Ohm | 20 V | Through Hole | TO-92-3 | - 55 C | + 150 C | Bulk | 1 Channel | Si | P-Channel | - 350 V | - 86 mA | 25 Ohms | Enhancement | |||
|
Ein Angebot |
978
Verfügbar auf Lager
|
Microchip Technology | MOSFET 350V 15Ohm | 20 V | Through Hole | TO-92-3 | - 55 C | + 150 C | Bulk | 1 Channel | Si | P-Channel | - 350 V | - 180 mA | 15 Ohms | Enhancement | |||
|
siehe | Diodes Incorporated | MOSFET P-Chnl 450V | 20 V | Through Hole | TO-92-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 350 V | - 50 mA | 150 Ohms | Enhancement | ||||
|
siehe | Microchip Technology | MOSFET 350V 15Ohm | 20 V | SMD/SMT | SOT-89-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 350 V | - 231 mA | 15 Ohms | Enhancement | ||||
|
siehe | Microchip Technology | MOSFET P-CH Enhancmnt Mode MOSFET | Through Hole | TO-92-3 | Reel | 1 Channel | Si | P-Channel | - 350 V | - 86 mA | 30 Ohms | Enhancement | |||||||
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siehe | Microchip Technology | MOSFET P-CH Enhancmnt Mode MOSFET | 20 V | Through Hole | TO-92-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 350 V | - 86 mA | 30 Ohms | Enhancement | ||||
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siehe | Microchip Technology | MOSFET P-CH Enhancmnt Mode MOSFET | Through Hole | TO-92-3 | Reel | 1 Channel | Si | P-Channel | - 350 V | - 180 mA | 15 Ohms | Enhancement | |||||||
|
siehe | Microchip Technology | MOSFET P-CH Enhancmnt Mode MOSFET | 20 V | Through Hole | TO-92-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 350 V | - 180 mA | 15 Ohms | Enhancement | ||||
|
siehe | Microchip Technology | MOSFET P-CH Enhancmnt Mode MOSFET | 20 V | Through Hole | TO-92-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 350 V | - 180 mA | 15 Ohms | Enhancement | ||||
|
siehe | Microchip Technology | MOSFET P-CH Enhancmnt Mode MOSFET | 20 V | Through Hole | TO-92-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 350 V | - 180 mA | 15 Ohms | Enhancement | ||||
|
siehe | Microchip Technology | MOSFET P-CH Enhancmnt Mode MOSFET | 20 V | Through Hole | TO-92-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 350 V | - 180 mA | 15 Ohms | Enhancement | ||||
|
siehe | Microchip Technology | MOSFET P-CH Enhancmnt Mode MOSFET | 20 V | Through Hole | TO-92-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 350 V | - 86 mA | 30 Ohms | Enhancement | ||||
|
siehe | Microchip Technology | MOSFET P-CH Enhancmnt Mode MOSFET | 20 V | Through Hole | TO-92-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 350 V | - 86 mA | 30 Ohms | Enhancement | ||||
|
siehe | Microchip Technology | MOSFET P-CH Enhancmnt Mode MOSFET | 20 V | Through Hole | TO-92-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 350 V | - 86 mA | 30 Ohms | Enhancement |
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