- Hersteller :
- Vgs - Gate-Source Voltage :
- Mounting Style :
- Package / Case :
- Maximum Operating Temperature :
- Rds On - Drain-Source Resistance :
- Ausgewählter Filter :
3 Produkt
Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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Ein Angebot |
554
Verfügbar auf Lager
|
STMicroelectronics | MOSFET N-channel 1700 V, 7 Ohm typ., 2.6 A, PowerMESH Power MO... | 30 V | Through Hole | TO-3PF-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1.7 kV | 2.6 A | 7 Ohms | 3 V | 44 nC | Enhancement | |||
|
Ein Angebot |
800
Verfügbar auf Lager
|
ROHM Semiconductor | MOSFET N-Ch 1700V 4A 44W SiC Silicon Carbide | - 6 V to 22 V | SMD/SMT | TO-268-3 | + 175 C | Reel | 1 Channel | SiC | N-Channel | 1.7 kV | 4 A | 1.15 Ohms | 1.6 V | 14 nC | Enhancement | ||||
|
Ein Angebot |
396
Verfügbar auf Lager
|
ROHM Semiconductor | MOSFET N-Ch 1700V 6A 57W SiC Silicon Carbide | - 6 V to 22 V | SMD/SMT | TO-268-3 | + 175 C | Reel | 1 Channel | SiC | N-Channel | 1.7 kV | 5.9 A | 750 mOhms | 1.6 V | 17 nC | Enhancement |
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