Schaffung einer zuverlässigen Handelsplattform für globale Hersteller und Lieferanten.
Vgs - Gate-Source Voltage :
Package / Case :
Maximum Operating Temperature :
Packaging :
Technology :
Id - Continuous Drain Current :
Rds On - Drain-Source Resistance :
Vgs th - Gate-Source Threshold Voltage :
Qg - Gate Charge :
3 Produkt
Bild Modell Preis Anzahl Lager Hersteller Beschreibung Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Packaging Number of Channels Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Channel Mode
STFW3N170
1+
$1.7240
10+
$1.4640
100+
$1.2680
250+
$1.2040
Ein Angebot
RFQ
554
Verfügbar auf Lager
STMicroelectronics MOSFET N-channel 1700 V, 7 Ohm typ., 2.6 A, PowerMESH Power MO... 30 V Through Hole TO-3PF-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 1.7 kV 2.6 A 7 Ohms 3 V 44 nC Enhancement
SCT2H12NYTB
1+
$2.1080
10+
$1.7920
100+
$1.5560
250+
$1.4760
400+
$1.3240
Ein Angebot
RFQ
800
Verfügbar auf Lager
ROHM Semiconductor MOSFET N-Ch 1700V 4A 44W SiC Silicon Carbide - 6 V to 22 V SMD/SMT TO-268-3   + 175 C Reel 1 Channel SiC N-Channel 1.7 kV 4 A 1.15 Ohms 1.6 V 14 nC Enhancement
SCT2750NYTB
1+
$2.4680
10+
$2.1000
100+
$1.8200
250+
$1.7280
400+
$1.5480
Ein Angebot
RFQ
396
Verfügbar auf Lager
ROHM Semiconductor MOSFET N-Ch 1700V 6A 57W SiC Silicon Carbide - 6 V to 22 V SMD/SMT TO-268-3   + 175 C Reel 1 Channel SiC N-Channel 1.7 kV 5.9 A 750 mOhms 1.6 V 17 nC Enhancement