Schaffung einer zuverlässigen Handelsplattform für globale Hersteller und Lieferanten.
Package / Case :
Id - Continuous Drain Current :
Vgs th - Gate-Source Threshold Voltage :
Qg - Gate Charge :
3 Produkt
Bild Modell Preis Anzahl Lager Hersteller Beschreibung Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Packaging Number of Channels Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Channel Mode Tradename
IXFH10N100P
1+
$2.3040
10+
$1.9600
100+
$1.7000
250+
$1.6120
Ein Angebot
RFQ
55
Verfügbar auf Lager
IXYS MOSFET 10 Amps 1000V 30 V Through Hole TO-247-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 1000 V 10 A 1.4 Ohms 6.5 V 56 nC Enhancement Polar, HiPerFET
IXTT10N100D
1+
$5.2480
10+
$4.8280
25+
$4.6280
100+
$4.0760
Ein Angebot
RFQ
9
Verfügbar auf Lager
IXYS MOSFET 10 Amps 1000V 1.4 Rds 30 V SMD/SMT TO-268-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 1000 V 10 A 1.4 Ohms - 3.5 V 130 nC Enhancement  
APT9M100B
1+
$2.5600
10+
$2.3040
25+
$2.0960
100+
$1.8920
Ein Angebot
RFQ
42
Verfügbar auf Lager
Microsemi MOSFET Power MOSFET - MOS8 30 V Through Hole TO-247-3 - 55 C + 150 C     Si N-Channel 1000 V 9 A 1.4 Ohms 4 V 80 nC Enhancement