- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
- Ausgewählter Filter :
2 Produkt
Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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Ein Angebot |
406
Verfügbar auf Lager
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IXYS | MOSFET 1500 V High Voltage Power MOSFET | 30 V | Through Hole | PLUS-247-3 | - 55 C | + 150 C | Tube | Si | N-Channel | 1500 V | 20 A | 1 Ohms | 4.5 V | 215 nC | Enhancement | |||
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Ein Angebot |
56
Verfügbar auf Lager
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IXYS | MOSFET Standard Linear Power MOSFET | 30 V | Through Hole | PLUS-247-3 | - 55 C | + 150 C | Si | N-Channel | 1500 V | 8 A | 3.6 Ohms | 8 V | 250 nC | Enhancement |
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