- Hersteller :
- Maximum Operating Temperature :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
- Ausgewählter Filter :
5 Produkt
| Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
Ein Angebot |
6,009
Verfügbar auf Lager
|
Infineon / IR | MOSFET 60V, 130A, DirectFET 2.9mOhm, 133nC Og | 20 V | SMD/SMT | DirectFET-ME | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 130 A | 2.2 mOhms | 3 V | 133 nC | StrongIRFET | |||
|
|
|
Ein Angebot |
1,964
Verfügbar auf Lager
|
Infineon Technologies | MOSFET 40V Single N-Channel HEXFET Power MOSFET | 20 V | SMD/SMT | DirectFET-ME | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 217 A | 1.2 mOhms | 3 V | 123 nC | Enhancement | StrongIRFET | ||
|
|
|
Ein Angebot |
4,483
Verfügbar auf Lager
|
Infineon / IR | MOSFET 40V Single N-Channel HEXFET | 20 V | SMD/SMT | DirectFET-ME | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 209 A | 2 mOhms | 1 V | 76 nC | Enhancement | StrongIRFET | ||
|
|
|
Ein Angebot |
4,713
Verfügbar auf Lager
|
Infineon / IR | MOSFET 60V StrongIRFET Power Mosfet | 20 V | SMD/SMT | DirectFET-ME | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 116 A | 3.5 mOhms | 3.7 V | 120 nC | StrongIRFET | |||
|
|
|
Ein Angebot |
4,660
Verfügbar auf Lager
|
Infineon Technologies | MOSFET 75V, 89A, DirectFET 5.7mOhm, 124nC Og | 20 V | SMD/SMT | DirectFET-ME | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 75 V | 89 A | 4.5 mOhms | 3.7 V | 124 nC | StrongIRFET |
1 / 1 Seite
