- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Ausgewählter Filter :
3 Produkt
Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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Ein Angebot |
441
Verfügbar auf Lager
|
STMicroelectronics | MOSFET POWER MOSFET | 25 V | SMD/SMT | PowerFLAT-5x5-12 | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 5 A | 1.05 Ohms | 2 V | 8.8 nC | Enhancement | ||||
|
Ein Angebot |
118
Verfügbar auf Lager
|
STMicroelectronics | MOSFET POWER MOSFET | 25 V | SMD/SMT | PowerFLAT-5x5-12 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 8.5 A | 530 mOhms | 4 V | 17 nC | Enhancement | |||
|
Ein Angebot |
2,990
Verfügbar auf Lager
|
STMicroelectronics | MOSFET POWER MOSFET | 20 V | SMD/SMT | PowerFLAT-5x5-12 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 400 V | 430 mA | 4.5 Ohms | 800 mV | 13 nC | Enhancement |
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