- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
- Ausgewählter Filter :
3 Produkt
Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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Ein Angebot |
6,252
Verfügbar auf Lager
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Infineon Technologies | MOSFET 25V 1 N-CH HEXFET 0.7mOhms 64nC | 20 V | SMD/SMT | DirectFET-L6 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 25 V | 270 A | 1 MOhms | 1.9 V | 64 nC | Directfet | ||||
|
Ein Angebot |
2,906
Verfügbar auf Lager
|
Infineon Technologies | MOSFET 60V N-Ch 139A 2.15 mOhm 147nC | 20 V | SMD/SMT | DirectFET-L6 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 148 A | 1.7 mOhms | 2.9 V | 146 nC | Directfet | ||||
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siehe | Infineon Technologies | MOSFET 40V AUTOGRADE 1 N-CH HEXFET 7.9mOhms | 20 V | SMD/SMT | DirectFET-L6 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 156 A | 7.9 mOhms | 89 nC | Enhancement |
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