MOSFET - Inix Electronic

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2 Produkt

Bild	Modell	Preis	Anzahl		Lager	Hersteller	Beschreibung	Vgs - Gate-Source Voltage	Mounting Style	Package / Case	Maximum Operating Temperature	Packaging	Number of Channels	Technology	Transistor Polarity	Vds - Drain-Source Breakdown Voltage	Id - Continuous Drain Current	Rds On - Drain-Source Resistance	Vgs th - Gate-Source Threshold Voltage	Qg - Gate Charge	Channel Mode
	SCT2H12NYTB	1+ $2.1080 10+ $1.7920 100+ $1.5560 250+ $1.4760 400+ $1.3240	Ein Angebot	PDF RFQ	800 Verfügbar auf Lager	ROHM Semiconductor	MOSFET N-Ch 1700V 4A 44W SiC Silicon Carbide	- 6 V to 22 V	SMD/SMT	TO-268-3	+ 175 C	Reel	1 Channel	SiC	N-Channel	1.7 kV	4 A	1.15 Ohms	1.6 V	14 nC	Enhancement
	SCT2750NYTB	1+ $2.4680 10+ $2.1000 100+ $1.8200 250+ $1.7280 400+ $1.5480	Ein Angebot	PDF RFQ	396 Verfügbar auf Lager	ROHM Semiconductor	MOSFET N-Ch 1700V 6A 57W SiC Silicon Carbide	- 6 V to 22 V	SMD/SMT	TO-268-3	+ 175 C	Reel	1 Channel	SiC	N-Channel	1.7 kV	5.9 A	750 mOhms	1.6 V	17 nC	Enhancement

SCT2H12NYTB

SCT2H12NYTB

ROHM Semiconductor

MOSFET N-Ch 1700V 4A 44W SiC Silicon Carbide

Stock : 800

1+: $2.1080

10+: $1.7920

100+: $1.5560

250+: $1.4760

400+: $1.3240

SCT2750NYTB

SCT2750NYTB

ROHM Semiconductor

MOSFET N-Ch 1700V 6A 57W SiC Silicon Carbide

Stock : 396

1+: $2.4680

10+: $2.1000

100+: $1.8200

250+: $1.7280

400+: $1.5480

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