- Vgs - Gate-Source Voltage :
- Package / Case :
- Number of Channels :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Ausgewählter Filter :
3 Produkt
| Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Ein Angebot |
8,429
Verfügbar auf Lager
|
Nexperia | MOSFET 20 V, dual P-channel Trench MOSFET | +/- 8 V, +/- 8 V | SMD/SMT | DFN1010B-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 20 V, - 20 V | - 500 mA, - 500 mA | 5 Ohms, 5 Ohms | - 450 mV, - 450 mV | 1.19 nC | Enhancement | ||
|
|
Ein Angebot |
8,613
Verfügbar auf Lager
|
Nexperia | MOSFET Trench Mosfet 20V, P-channel | 8 V | SMD/SMT | DFN1006-3 | - 55 C | + 150 C | Reel | Si | P-Channel | - 20 V | - 500 mA | 1.02 Ohms | - 0.7 V | 1.19 nC | Enhancement | |||
|
|
Ein Angebot |
1,773
Verfügbar auf Lager
|
Nexperia | MOSFET 20V P-channel Trench MOSFET | +/- 8 V | SMD/SMT | DFN1006B-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 500 mA | 1.02 Ohms | - 700 mV | 1.19 nC | Enhancement |
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