- Hersteller :
- Package / Case :
- Maximum Operating Temperature :
- Number of Channels :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Ausgewählter Filter :
2 Produkt
Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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|
Ein Angebot |
1,902
Verfügbar auf Lager
|
ON Semiconductor | MOSFET POWER MOSFET | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 23 A | 20 mOhms | 12.6 nC | |||||
|
Ein Angebot |
3,000
Verfügbar auf Lager
|
Diodes Incorporated | MOSFET Dual N-Ch Enh FET 12V 10Vgs 1.7W | 10 V | SMD/SMT | U-DFN2020-B-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 12 V, 12 V | 6.9 A, 6.9 A | 25 mOhms, 25 mOhms | 1 V | 12.6 nC | Enhancement |
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