- Hersteller :
- Package / Case :
- Number of Channels :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Ausgewählter Filter :
8 Produkt
Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Ein Angebot |
6,705
Verfügbar auf Lager
|
Infineon Technologies | MOSFET N-Ch 200V 15.2A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 200 V | 15.2 A | 77 mOhms | 2 V | 11.6 nC | Enhancement | ||||
|
Ein Angebot |
4,044
Verfügbar auf Lager
|
Diodes Incorporated | MOSFET 20V Comp Pair ENH 2kV ESD SO-8 Mosfet | 10 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 20 V, 20 V | 8.5 A, 6.8 A | 28 mOhms, 45 mOhms | 1.1 V | 11.6 nC | Enhancement | ||||
|
Ein Angebot |
6,394
Verfügbar auf Lager
|
Diodes Incorporated | MOSFET MOSFET,N-CHANNEL | 12 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 6.9 A | 13 mOhms | 11.6 nC | ||||||
|
Ein Angebot |
5,654
Verfügbar auf Lager
|
Diodes Incorporated | MOSFET 30V P-CH MOSFET | 12 V | SMD/SMT | SC-59-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 3 A | 85 mOhms | - 1.3 V | 11.6 nC | Enhancement | ||||
|
Ein Angebot |
2,231
Verfügbar auf Lager
|
Diodes Incorporated | MOSFET N-Ch FET VDSS 20V VGSS 20V ID 9.8A | 12 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 9.8 A | 20 mOhms | 11.6 nC | Enhancement | |||||
|
Ein Angebot |
1,563
Verfügbar auf Lager
|
Diodes Incorporated | MOSFET 30V N-CH MOSFET | 20 V | SMD/SMT | PowerDI3333-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 7.5 A | 18 mOhms | 2 V | 11.6 nC | Enhancement | ||||
|
siehe | Infineon Technologies | MOSFET N-Ch 200V 15.2A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 200 V | 15.2 A | 77 mOhms | 2 V | 11.6 nC | Enhancement | OptiMOS | ||||
|
siehe | Nexperia | MOSFET PMPB23XNE/SOT1220/REEL 7" Q1/T | SMD/SMT | DFN2020MD-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 10.1 A | 19 mOhms | 0.65 V | 11.6 nC | Enhancement |
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