- Hersteller :
- Package / Case :
- Maximum Operating Temperature :
- Rds On - Drain-Source Resistance :
- Ausgewählter Filter :
4 Produkt
| Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Ein Angebot |
1,399
Verfügbar auf Lager
|
ON Semiconductor | MOSFET NFET SO8FL 40V 345A 8MOHM | 20 V | SMD/SMT | SO-FL-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 378 A | 570 uOhms | 2 V | 128 nC | Enhancement | ||
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Ein Angebot |
1,325
Verfügbar auf Lager
|
ON Semiconductor | MOSFET T6-40V N 0.7 MOHMS SL | 20 V | SMD/SMT | SO-FL-8 | - 55 C | + 175 C | Reel | Si | N-Channel | 40 V | 378 A | 700 uOhms | 2 V | 128 nC | Enhancement | |||
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Ein Angebot |
4,800
Verfügbar auf Lager
|
Nexperia | MOSFET N-channel 100 V 7.6 mo FET | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 75 A | 6.5 mOhms | 3 V | 128 nC | Enhancement | ||
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Ein Angebot |
1,473
Verfügbar auf Lager
|
ON Semiconductor | MOSFET NFET SO8FL 30V 236A | 20 V | SMD/SMT | SO-FL-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 246 A | 820 uOhms | 1.2 V | 128 nC | Enhancement |
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