- Vgs - Gate-Source Voltage :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Ausgewählter Filter :
3 Produkt
| Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Ein Angebot |
3,000
Verfügbar auf Lager
|
Vishay / Siliconix | MOSFET P-Channel 12V AEC-Q101 Qualified | +/- 8 V | SMD/SMT | PowerPAK-SO-8L-4 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 12 V | - 32 A | 0.005 Ohms | - 1.5 V | 164 nC | Enhancement | TrenchFET | ||
|
|
Ein Angebot |
3,000
Verfügbar auf Lager
|
Vishay / Siliconix | MOSFET P Ch -30Vds 20Vgs AEC-Q101 Qualified | +/- 20 V | SMD/SMT | PowerPAK-SO-8L-4 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 30 A | 7 mOhms | - 2.5 V | 164 nC | Enhancement | |||
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siehe | Vishay / Siliconix | MOSFET P-Channel 30V AEC-Q101 Qualified | +/- 20 V | SMD/SMT | PowerPAK-SO-8L-4 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 30 A | 0.007 Ohms | - 2.5 V | 164 nC | Enhancement | TrenchFET |
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