- Vgs - Gate-Source Voltage :
- Package / Case :
- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Tradename :
- Ausgewählter Filter :
11 Produkt
| Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Ein Angebot |
2,406
Verfügbar auf Lager
|
Infineon Technologies | MOSFET P-Ch -100V 15A DPAK-2 | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 100 V | - 15 A | 140 mOhms | - 2 V | 62 nC | Enhancement | SIPMOS | ||
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Ein Angebot |
2,109
Verfügbar auf Lager
|
Vishay Semiconductors | MOSFET 40V 10A 1.56W AEC-Q101 Qualified | +/- 20 V | SMD/SMT | SO-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 20.7 A | 0.0075 Ohms | 1.5 V | 62 nC | Enhancement | TrenchFET | ||
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Ein Angebot |
4,710
Verfügbar auf Lager
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Infineon Technologies | MOSFET N-Ch 25V 163A CanPAK-3 MX OptiMOS | 20 V | SMD/SMT | WDSON-2-3 | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 163 A | 1.3 mOhms | 1.2 V to 2 V | 62 nC | Enhancement | OptiMOS | ||
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Ein Angebot |
4,798
Verfügbar auf Lager
|
Nexperia | MOSFET BUK766R0-60E/D2PAK/REEL 13" Q1 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 75 A | 4.58 mOhms | 2.4 V | 62 nC | Enhancement | |||
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Ein Angebot |
1,248
Verfügbar auf Lager
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Infineon Technologies | MOSFET P-Ch -100V 15A DPAK-2 | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 100 V | - 15 A | 140 mOhms | - 2 V | 62 nC | Enhancement | |||
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Ein Angebot |
620
Verfügbar auf Lager
|
Vishay Semiconductors | MOSFET 100V 40A 107W AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 40 A | 0.023 Ohms | 2.5 V | 62 nC | Enhancement | TrenchFET | ||
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Ein Angebot |
2,529
Verfügbar auf Lager
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ROHM Semiconductor | MOSFET Pch -30V -12A Middle Power MOSFET | 20 V | SMD/SMT | HSMT-8 | Reel | 1 Channel | Si | P-Channel | - 39 V | - 12 A | 61 mOhms | - 2.5 V | 62 nC | ||||||
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siehe | Infineon Technologies | MOSFET Auto 40V N-Ch FET 2.6mOhm 123A | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 40 V | 123 A | 2.6 mOhms | 62 nC | CoolIRFet | ||||||||
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Ein Angebot |
385
Verfügbar auf Lager
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STMicroelectronics | MOSFET N-Ch 550V 0.066Ohm 31A MDmesh M5 | SMD/SMT | PowerFLAT-8x8-HV-5 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 550 V | 22.5 A | 90 mOhms | 4 V | 62 nC | |||||
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siehe | STMicroelectronics | MOSFET Nchannel 30 V 2.5 m Ohm80A DPAK STripFET | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 80 A | 3 mOhms | 62 nC | ||||||
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siehe | Infineon / IR | MOSFET Auto 40V N-Ch FET 2.6mOhm 123A | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 40 V | 123 A | 2.6 mOhms | 62 nC | CoolIRFet |
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