- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Number of Channels :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
-
- 10.6 A (2)
- 100 A (13)
- 11.8 A (1)
- 116 A (1)
- 12.4 A (2)
- 120 A (9)
- 135 A (1)
- 150 A (2)
- 16 A (1)
- 17.2 A (1)
- 18.2 A (1)
- 180 A (2)
- 200 A (1)
- 201 A (1)
- 300 A (2)
- 34 A (2)
- 40 A (8)
- 47.5 A (1)
- 49 A (1)
- 50 A (1)
- 51 A (1)
- 545 A (1)
- 57 A (1)
- 60 A (2)
- 7.2 A (2)
- 70 A (3)
- 71 A (1)
- 74 A (1)
- 78 A (1)
- 80 A (2)
- 82 A (1)
- 90 A (1)
- 95 A (1)
- Rds On - Drain-Source Resistance :
-
- 1.1 mOhms (2)
- 1.4 mOhms (1)
- 1.5 mOhms (2)
- 1.7 mOhms (4)
- 1.8 mOhms (1)
- 10.2 mOhms (3)
- 10.3 mOhms (1)
- 10.4 mOhms (1)
- 11.9 mOhms (1)
- 13.5 mOhms (1)
- 16.3 mOhms (2)
- 17 mOhms (2)
- 2 mOhms (3)
- 2.1 mOhms (1)
- 2.2 mOhms (1)
- 2.3 mOhms (1)
- 2.5 mOhms (1)
- 2.7 mOhms (2)
- 2.8 mOhms (1)
- 20 mOhms (2)
- 3 mOhms (1)
- 3.1 mOhms (2)
- 3.2 mOhms (1)
- 3.4 mOhms (4)
- 3.5 mOhms (1)
- 3.8 mOhms (1)
- 3.9 mOhms (1)
- 30 mOhms (2)
- 350 mOhms (1)
- 4 mOhms (1)
- 4.1 mOhms (1)
- 4.2 mOhms (3)
- 4.5 mOhms (1)
- 4.7 mOhms (1)
- 4.8 mOhms (1)
- 5.3 mOhms (1)
- 5.6 mOhms (1)
- 5.7 mOhms (2)
- 6.6 mOhms (2)
- 7 mOhms (1)
- 7.6 mOhms (1)
- 7.8 mOhms (1)
- 8 mOhms (1)
- 8.2 mOhms (2)
- 8.3 mOhms (2)
- 9 mOhms (1)
- 9.7 mOhms (1)
- Qg - Gate Charge :
-
- 11 nC (1)
- 11.3 nC (2)
- 112 nC (1)
- 13.7 nC (1)
- 133 nC (1)
- 15 nC (2)
- 15.6 nC (2)
- 168 nC (1)
- 169 nC (1)
- 178 nC (2)
- 18 nC (1)
- 20 nC (1)
- 210 nC (2)
- 223 nC (2)
- 23 nC (1)
- 24 nC (3)
- 26 nC (1)
- 27 nC (1)
- 28 nC (4)
- 29.3 nC (1)
- 30 nC (3)
- 31.3 nC (1)
- 32 nC (1)
- 34 nC (1)
- 35 nC (1)
- 41 nC (1)
- 42 nC (1)
- 43 nC (1)
- 44 nC (1)
- 46 nC (2)
- 46.4 nC (1)
- 48 nC (1)
- 5.5 nC (2)
- 51 nC (1)
- 562 nC (1)
- 58 nC (1)
- 61 nC (1)
- 62.1 nC (2)
- 68 nC (1)
- 70 nC (2)
- 72 nC (2)
- 74 nC (1)
- 75 nC (1)
- 76 nC (1)
- 8 nC (1)
- 8.8 nC (2)
- 81 nC (1)
- 87 nC (2)
- 9.7 nC, 11.5 nC (1)
- 98 nC (1)
- 99 nC (1)
- Tradename :
- Ausgewählter Filter :
71 Produkt
| Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
Ein Angebot |
10,410
Verfügbar auf Lager
|
Infineon Technologies | MOSFET N-Ch 80V 100A TDSON-8 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 80 V | 100 A | 3.9 mOhms | 2.2 V | 74 nC | Enhancement | |||
|
|
|
Ein Angebot |
8,323
Verfügbar auf Lager
|
Infineon Technologies | MOSFET N-Ch 100V 100A TDSON-8 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 100 A | 3.4 mOhms | 2.2 V | 72 nC | Enhancement | |||
|
|
|
Ein Angebot |
16,358
Verfügbar auf Lager
|
Infineon Technologies | MOSFET N-Ch 100V 90A TDSON-8 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 80 A | 10.2 mOhms | 2.2 V | 30 nC | Enhancement | |||
|
|
Ein Angebot |
1,842
Verfügbar auf Lager
|
Infineon Technologies | MOSFET N-Ch 100V 300A HSOF-8 | 20 V | SMD/SMT | HSOF-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 300 A | 2 mOhms | 2.2 V | 169 nC | Enhancement | |||
|
|
Ein Angebot |
3,950
Verfügbar auf Lager
|
Infineon / IR | MOSFET N-CHANNEL 30 / 40 | 40 V | SMD/SMT | DirectFET-L8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 545 A | 350 mOhms | 2.2 V | 562 nC | Enhancement | |||
|
|
|
Ein Angebot |
22,661
Verfügbar auf Lager
|
Infineon Technologies | MOSFET Pwr transistor 100V OptiMOS 5 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 60 A | 8.2 mOhms | 2.2 V | 28 nC | Enhancement | |||
|
|
Ein Angebot |
6,000
Verfügbar auf Lager
|
Infineon Technologies | MOSFET N-Ch 80V 120A D2PAK-2 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 80 V | 120 A | 2.7 mOhms | 2.2 V | 87 nC | Enhancement | |||
|
|
|
Ein Angebot |
1,353
Verfügbar auf Lager
|
Infineon Technologies | MOSFET 100VPower transistor OptiMOS 5 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 100 A | 4.7 mOhms | 2.2 V | 70 nC | Enhancement | |||
|
|
|
Ein Angebot |
6,262
Verfügbar auf Lager
|
Infineon Technologies | MOSFET Pwr transistor 100V OptiMOS 5 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 60 A | 8.2 mOhms | 2.2 V | 28 nC | Enhancement | |||
|
|
|
Ein Angebot |
4,345
Verfügbar auf Lager
|
Infineon Technologies | MOSFET N-Ch 80V 100A | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 80 V | 100 A | 4.5 mOhms | 2.2 V | 61 nC | Enhancement | |||
|
|
Ein Angebot |
5,380
Verfügbar auf Lager
|
Infineon Technologies | MOSFET N-Ch 100V 40A TSDSON-8 | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 40 A | 8.3 mOhms | 2.2 V | 28 nC | Enhancement | |||
|
|
|
Ein Angebot |
12,221
Verfügbar auf Lager
|
Infineon Technologies | MOSFET N-Ch 80V 100A TDSON-8 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 80 V | 100 A | 5.7 mOhms | 2.2 V | 43 nC | Enhancement | |||
|
|
|
Ein Angebot |
10,962
Verfügbar auf Lager
|
Infineon Technologies | MOSFET N-Ch 80V 49A TDSON-8 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 80 V | 49 A | 16.3 mOhms | 2.2 V | 15 nC | Enhancement | |||
|
|
|
Ein Angebot |
637
Verfügbar auf Lager
|
Infineon Technologies | MOSFET N-Ch 80V 120A D2PAK-2 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 80 V | 120 A | 1.5 mOhms | 2.2 V | 223 nC | Enhancement | |||
|
|
|
Ein Angebot |
633
Verfügbar auf Lager
|
Infineon Technologies | MOSFET N-Ch 100V 120A D2PAK-2 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 120 A | 1.7 mOhms | 2.2 V | 210 nC | Enhancement | |||
|
|
|
Ein Angebot |
4,891
Verfügbar auf Lager
|
Infineon Technologies | MOSFET N-Ch 80V 100A TDSON-8 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 80 V | 100 A | 5.3 mOhms | 2.2 V | 46 nC | Enhancement | |||
|
|
Ein Angebot |
2,948
Verfügbar auf Lager
|
STMicroelectronics | MOSFET POWER MOSFET | 20 V | SMD/SMT | PowerFLAT-5x6-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 50 A | 1.1 mOhms | 2.2 V | 46 nC | Enhancement | |||
|
|
Ein Angebot |
5,907
Verfügbar auf Lager
|
Infineon Technologies | MOSFET N-Ch 30V 40A TDSON-8 OptiMOS | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 40 A | 1.7 mOhms | 2.2 V | 23 nC | OptiMOS | |||
|
|
|
Ein Angebot |
2,594
Verfügbar auf Lager
|
Infineon Technologies | MOSFET N-Ch 80V 74A TDSON-8 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 80 V | 74 A | 10.4 mOhms | 2.2 V | 24 nC | Enhancement | |||
|
|
Ein Angebot |
3,835
Verfügbar auf Lager
|
Infineon / IR | MOSFET TRENCH_MOSFETS | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 201 A | 1.4 mOhms | 2.2 V | 70 nC | Enhancement | StrongIRFET | ||
|
|
Ein Angebot |
2,081
Verfügbar auf Lager
|
Infineon Technologies | MOSFET N-Ch 80V 180A D2PAK-2 | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 80 V | 180 A | 1.8 mOhms | 2.2 V | 178 nC | Enhancement | |||
|
|
|
Ein Angebot |
3,685
Verfügbar auf Lager
|
Infineon Technologies | MOSFET N-Ch 80V 95A TDSON-8 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 80 V | 95 A | 7.6 mOhms | 2.2 V | 32 nC | Enhancement | |||
|
|
|
Ein Angebot |
1,090
Verfügbar auf Lager
|
Infineon Technologies | MOSFET N-Ch 80V 120A D2PAK-2 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 80 V | 120 A | 2.5 mOhms | 2.2 V | 133 nC | Enhancement | |||
|
|
|
Ein Angebot |
3,032
Verfügbar auf Lager
|
Infineon Technologies | MOSFET N-Ch 80V 82A TDSON-8 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 80 V | 82 A | 9 mOhms | 2.2 V | 27 nC | Enhancement | |||
|
|
|
Ein Angebot |
3,857
Verfügbar auf Lager
|
Infineon / IR | MOSFET MOSFET N-CH 30V 100A PQFN | 20 V | SMD/SMT | PQFN-8 | Reel | 1 Channel | Si | N-Channel | 30 V | 100 A | 1.1 mOhms | 2.2 V | 58 nC | ||||||
|
|
Ein Angebot |
3,347
Verfügbar auf Lager
|
Infineon Technologies | MOSFET 40V Single N-Channel HEXFET Power MOSFET | 20 V | SMD/SMT | DirectFET-MF | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 135 A | 2.3 mOhms | 2.2 V | 81 nC | Enhancement | StrongIRFET | ||
|
|
|
Ein Angebot |
480
Verfügbar auf Lager
|
Infineon Technologies | MOSFET N-Ch 100V 120A D2PAK-2 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 120 A | 1.7 mOhms | 2.2 V | 210 nC | Enhancement | |||
|
|
Ein Angebot |
4,266
Verfügbar auf Lager
|
Nexperia | MOSFET 30V N-Channel 2.4mOhm | 2.2 V | SMD/SMT | LFPAK56-5 | Reel | 1 Channel | Si | N-Channel | 30 V | 70 A | 3.2 mOhms | 2.2 V | 51 nC | Enhancement | |||||
|
|
|
Ein Angebot |
917
Verfügbar auf Lager
|
Infineon Technologies | MOSFET N-Ch 80V 120A D2PAK-2 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 80 V | 120 A | 2.7 mOhms | 2.2 V | 87 nC | Enhancement | |||
|
|
|
Ein Angebot |
1,384
Verfügbar auf Lager
|
Infineon Technologies | MOSFET N-Ch 80V 40A TSDSON-8 | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 80 V | 40 A | 10.2 mOhms | 2.2 V | 24 nC | Enhancement |
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