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| Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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Ein Angebot |
2,072
Verfügbar auf Lager
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Diodes Incorporated | MOSFET 30V Comp H-Bridge ENH FET 20VGS | +/- 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | - 40 V, 40 V | - 2.9 A, 4 A | 58 mOhms, 100 mOhms | - 1 V, 3 V | 11.1 nC, 12.5 nC | Enhancement |
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