- Package / Case :
- Maximum Operating Temperature :
- Qg - Gate Charge :
- Tradename :
- Ausgewählter Filter :
5 Produkt
| Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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Ein Angebot |
2,965
Verfügbar auf Lager
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Fairchild Semiconductor | MOSFET PT7 60/20v SG, N-Channel PowerTrench MOSFET | 20 V | SMD/SMT | Power-33-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 32 A | 1.65 mOhms | 3.3 V | PowerTrench Power Clip | ||||
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Ein Angebot |
5,677
Verfügbar auf Lager
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Toshiba | MOSFET POWER MOSFET TRANSISTOR PD=170W | SMD/SMT | DSOP-Advance-8 | Reel | 1 Channel | Si | N-Channel | 45 V | 300 A | 1.65 mOhms | 122 nC | Enhancement | |||||||
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Ein Angebot |
800
Verfügbar auf Lager
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Infineon / IR | MOSFET MOSFET N CH 60V 195A D2PAK | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 195 A | 1.65 mOhms | 3.7 V | 274 nC | StrongIRFET | |||
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siehe | Nexperia | MOSFET N-channel TrenchMOS standard level FET | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 120 A | 1.65 mOhms | 3 V | 109.2 nC | Enhancement | ||||
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siehe | Infineon Technologies | MOSFET Auto 40V N-Ch FET 1.98mOhms 100A | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 40 V | 100 A | 1.65 mOhms | 103 nC | CoolIRFet |
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