- Vgs - Gate-Source Voltage :
- Package / Case :
- Maximum Operating Temperature :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Ausgewählter Filter :
7 Produkt
Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Ein Angebot |
2,500
Verfügbar auf Lager
|
Diodes Incorporated | MOSFET MOSFET BVDSS | +/- 20 V, +/- 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 30 V, - 30 V | - 6 A, - 6 A | 20 mOhms, 20 mOhms | - 3 V, - 3 V | 22 nC, 22 nC | Enhancement | ||||
|
Ein Angebot |
14,452
Verfügbar auf Lager
|
Infineon Technologies | MOSFET MOSFET | 16 V, 16 V | SMD/SMT | TDSON-8 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel | 100 V, 100 V | 20 A, 20 A | 20 mOhms, 20 mOhms | 1.1 V, 1.1 V | 27 nC, 27 nC | Enhancement | ||||
|
Ein Angebot |
4,948
Verfügbar auf Lager
|
Infineon Technologies | MOSFET MOSFET | 16 V, 16 V | SMD/SMT | TDSON-8 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel | 100 V, 100 V | 20 A, 20 A | 20 mOhms, 20 mOhms | 1.1 V, 1.1 V | 27 nC, 27 nC | Enhancement | ||||
|
Ein Angebot |
9,000
Verfügbar auf Lager
|
Diodes Incorporated | MOSFET MOSFET BVDSS: 25V-30V | 20 V, 20 V | SMD/SMT | U-DFN2020-B-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V, 30 V | 7.7 A, 7.7 A | 20 mOhms, 20 mOhms | 1 V, 1 V | 7 nC, 7 nC | Enhancement | ||||
|
siehe | Infineon Technologies | MOSFET MOSFET_(75V,120V( | 16 V, 16 V | SMD/SMT | TDSON-8 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel | 100 V, 100 V | 20 A, 20 A | 20 mOhms, 20 mOhms | 1.1 V, 1.1 V | 27 nC, 27 nC | Enhancement | |||||
|
Ein Angebot |
5,000
Verfügbar auf Lager
|
Infineon Technologies | MOSFET N-CHANNEL_100+ | 16 V, 16 V | SMD/SMT | TDSON-8 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel | 100 V, 100 V | 20 A, 20 A | 20 mOhms, 20 mOhms | 1.1 V, 1.1 V | 27 nC, 27 nC | Enhancement | CoolMOS | |||
|
Ein Angebot |
2,935
Verfügbar auf Lager
|
ROHM Semiconductor | MOSFET 4V Drive Nch+Nch MOSFET | 20 V, 20 V | SMD/SMT | TSMT-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V, 30 V | 6 A, 6 A | 20 mOhms, 20 mOhms | 1 V, 1 V | 20 nC, 20 nC | Enhancement |
1 / 1 Seite