- Package / Case :
- Number of Channels :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Ausgewählter Filter :
6 Produkt
| Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Ein Angebot |
10,575
Verfügbar auf Lager
|
Fairchild Semiconductor | MOSFET SSOT-6 N-CH 25V | - 500 mV, + 8 V | SMD/SMT | SSOT-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 25 V | 220 mA | 3.8 Ohms | Enhancement | |||||
|
|
Ein Angebot |
1,594
Verfügbar auf Lager
|
STMicroelectronics | MOSFET N-Ch 450V 3.2 ohm 1.8 A SuperMESH3 | 3 V | SMD/SMT | SOT-223-3 | + 150 C | Reel | 1 Channel | Si | N-Channel | 450 V | 600 mA | 3.8 Ohms | 4.5 V | 6 nC | |||||
|
|
Ein Angebot |
5,720
Verfügbar auf Lager
|
Diodes Incorporated | MOSFET 25V Dual N-Ch Enh 8Vgss .24A 0.3W | 8 V | SMD/SMT | SOT-363-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 25 V | 240 mA | 3.8 Ohms | 0.85 V | 0.36 nC | Enhancement | |||
|
|
Ein Angebot |
13,453
Verfügbar auf Lager
|
ROHM Semiconductor | MOSFET Small Signal MOSFET | 10 V | SMD/SMT | DFN0806-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 100 mA | 3.8 Ohms | - 1 V | |||||
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|
|
Ein Angebot |
130,000
Verfügbar auf Lager
|
Diodes Incorporated | MOSFET 25V Dual N-Ch Enh 8Vgss .24A 0.3W | 8 V | SMD/SMT | SOT-363-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 25 V | 240 mA | 3.8 Ohms | 0.85 V | 0.36 nC | Enhancement | PowerDI | ||
|
|
Ein Angebot |
10,000
Verfügbar auf Lager
|
Central Semiconductor | MOSFET N-Ch 3A 800V PFC FET 11.3nC 3.8Ohm 80W | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 800 V | 3 A | 3.8 Ohms | 2 V | 11.3 nC | Enhancement |
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