- Hersteller :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Ausgewählter Filter :
2 Produkt
Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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Ein Angebot |
2,479
Verfügbar auf Lager
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ON Semiconductor | MOSFET NFET DPAK 600V 5.9A | 25 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 5.7 A | 820 mOhms | 2 V | 12 nC | Enhancement | |||
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Ein Angebot |
906
Verfügbar auf Lager
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STMicroelectronics | MOSFET N-channel 650 V, 0.71 Ohm typ., 5.5 A MDmesh M2 Power MOS... | 25 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 5.5 A | 820 mOhms | 2 V to 4 V | 11.5 nC | Enhancement |
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