- Vgs - Gate-Source Voltage :
- Package / Case :
- Number of Channels :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Ausgewählter Filter :
6 Produkt
Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Ein Angebot |
2,054
Verfügbar auf Lager
|
STMicroelectronics | MOSFET | 25 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 34 A | 87 mOhms | 2 V | 55 nC | Enhancement | ||||
|
Ein Angebot |
1,723
Verfügbar auf Lager
|
Fairchild Semiconductor | MOSFET -30V Dual P-Channel PowerTrench MOSFET | 25 V | SMD/SMT | MicroFET-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 30 V | - 3.3 A | 87 mOhms | Enhancement | PowerTrench | |||||
|
Ein Angebot |
2,623
Verfügbar auf Lager
|
STMicroelectronics | MOSFET POWER MOSFET | +/- 8 V | SMD/SMT | SOT-23-3 | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 1.4 A | 87 mOhms | 400 mV | 4.8 nC | Enhancement | |||||
|
Ein Angebot |
177
Verfügbar auf Lager
|
Toshiba | MOSFET N-Ch DTMOSIV 600V 240W 3000pF 30.8A | 30 V | SMD/SMT | DFN8x8-5 | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 30.8 A | 87 mOhms | 3 V | 105 nC | Enhancement | |||||
|
siehe | Nexperia | MOSFET P-Chan -30V -3.8A | 12 V | SMD/SMT | DFN2020-6 | Reel | 2 Channel | Si | P-Channel | - 30 V | - 3.8 A | 87 mOhms | Enhancement | |||||||||
|
Ein Angebot |
2,450
Verfügbar auf Lager
|
Fairchild Semiconductor | MOSFET PChan Sgl -30V -3.3A PowerTrench MOSFET | 25 V | SMD/SMT | MicroFET-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 3.3 A | 87 mOhms | - 1.9 V | 7.2 nC |
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