- Hersteller :
- Package / Case :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Ausgewählter Filter :
4 Produkt
| Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Ein Angebot |
4,733
Verfügbar auf Lager
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Diodes Incorporated | MOSFET 200V P-CHANNEL | 20 V | SMD/SMT | SOT-23F-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 200 V | - 137 mA | 28 Ohms | Enhancement | ||||
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Ein Angebot |
4,850
Verfügbar auf Lager
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Infineon Technologies | MOSFET N-Ch 600V 90mA SOT-89-3 | 20 V | SMD/SMT | SOT-89-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 90 mA | 28 Ohms | 1.3 V | 5.8 nC | Enhancement | ||
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|
|
Ein Angebot |
2,703
Verfügbar auf Lager
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Infineon Technologies | MOSFET N-Ch 600V 90mA SOT-89-3 | 20 V | SMD/SMT | SOT-89-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 90 mA | 28 Ohms | 1.3 V | 5.8 nC | Enhancement | ||
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siehe | Diodes Incorporated | MOSFET P-Ch 200 Volt 0.122A | 20 V | SMD/SMT | SOT-23-5 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 200 V | - 122 mA | 28 Ohms | Enhancement |
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