- Vgs - Gate-Source Voltage :
- Mounting Style :
- Package / Case :
- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Number of Channels :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Vgs th - Gate-Source Threshold Voltage :
- Channel Mode :
- Ausgewählter Filter :
26 Produkt
| Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Ein Angebot |
7,885
Verfügbar auf Lager
|
Nexperia | MOSFET TAPE-7 MOSFET | - 20 V | SMD/SMT | SOT-89-3 | - 65 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 240 V | - 200 mA | 12 Ohms | - 2.8 V | Enhancement | |||
|
|
Ein Angebot |
3,227
Verfügbar auf Lager
|
Nexperia | MOSFET TAPE-7 MOSFET | 20 V | SMD/SMT | SOT-223-3 | - 65 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 200 V | - 225 mA | 12 Ohms | Enhancement | ||||
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|
Ein Angebot |
2,449
Verfügbar auf Lager
|
Infineon Technologies | MOSFET N-Ch 100V 90mA SOT-23-3 | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 90 mA | 12 Ohms | 2.1 nC | ||||
|
|
Ein Angebot |
8,545
Verfügbar auf Lager
|
Microchip Technology | MOSFET 400V 12Ohm | 20 V | SMD/SMT | SOT-89-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 400 V | 260 mA | 12 Ohms | Enhancement | ||||
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|
|
Ein Angebot |
8,922
Verfügbar auf Lager
|
Microchip Technology | MOSFET 100V 12Ohm | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 100 V | - 120 mA | 12 Ohms | Enhancement | ||||
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|
|
Ein Angebot |
2,759
Verfügbar auf Lager
|
Microchip Technology | MOSFET 300V 12Ohm | 20 V | SMD/SMT | SOT-89-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 300 V | 200 mA | 12 Ohms | Depletion | ||||
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|
Ein Angebot |
480
Verfügbar auf Lager
|
Microchip Technology | MOSFET 220V 12Ohm | 20 V | SMD/SMT | SOT-89-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 220 V | - 260 mA | 12 Ohms | Enhancement | ||||
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|
|
Ein Angebot |
1,900
Verfügbar auf Lager
|
Microchip Technology | MOSFET 220V 12 Ohm 0.7A | 20 V | SMD/SMT | SOT-89-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 220 V | - 260 mA | 12 Ohms | Enhancement | ||||
|
|
Ein Angebot |
5,807
Verfügbar auf Lager
|
Panasonic | MOSFET Nch+Nch MOSFET 2.0x2.1mm Flat lead | 12 V | SMD/SMT | SOT-363-6 | - 40 C | + 85 C | Reel | 2 Channel | Si | N-Channel | 60 V | 100 mA | 12 Ohms | 1.2 V | Enhancement | |||
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|
Ein Angebot |
17
Verfügbar auf Lager
|
Microchip Technology | MOSFET 200V 12Ohm | 20 V | SMD/SMT | SOT-89-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 200 V | - 260 mA | 12 Ohms | Enhancement | ||||
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|
|
Ein Angebot |
3,039
Verfügbar auf Lager
|
Microchip Technology | MOSFET 220V 12 Ohm 0.7A | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 220 V | - 120 mA | 12 Ohms | Enhancement | ||||
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siehe | Nexperia | MOSFET TAPE13 PWR-MOS | 20 V | SMD/SMT | SOT-89-3 | - 65 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 240 V | - 200 mA | 12 Ohms | Enhancement | |||||
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siehe | Microchip Technology | MOSFET N-Channel MOSFET 300V 0.175A 3P TO-92 | 20 V | Through Hole | TO-92-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 300 V | 175 mA | 12 Ohms | Depletion | |||||
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siehe | Microchip Technology | MOSFET N-CH Enhancmnt Mode MOSFET | 20 V | Through Hole | TO-92-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 400 V | 175 mA | 12 Ohms | Enhancement | |||||
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siehe | Microchip Technology | MOSFET N-Channel MOSFET 300V 0.175A 3P TO-92 | 20 V | Through Hole | TO-92-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 300 V | 175 mA | 12 Ohms | Depletion | |||||
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siehe | Microchip Technology | MOSFET N-Channel MOSFET 300V 0.175A 3P TO-92 | 20 V | Through Hole | TO-92-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 300 V | 175 mA | 12 Ohms | Depletion | |||||
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siehe | Microchip Technology | MOSFET N-CH Enhancmnt Mode MOSFET | 20 V | Through Hole | TO-92-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 400 V | 160 mA | 12 Ohms | Enhancement | |||||
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siehe | Microchip Technology | MOSFET N-CH Enhancmnt Mode MOSFET | 20 V | Through Hole | TO-92-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 400 V | 175 mA | 12 Ohms | Enhancement | |||||
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siehe | Microchip Technology | MOSFET N-CH Enhancmnt Mode MOSFET | 20 V | Through Hole | TO-92-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 400 V | 175 mA | 12 Ohms | Enhancement | |||||
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siehe | Microchip Technology | MOSFET N-Channel MOSFET 300V 0.175A 3P TO-92 | 20 V | Through Hole | TO-92-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 300 V | 175 mA | 12 Ohms | Depletion | |||||
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siehe | Microchip Technology | MOSFET N-CH Enhancmnt Mode MOSFET | 20 V | Through Hole | TO-92-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 400 V | 160 mA | 12 Ohms | Enhancement | |||||
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siehe | Microchip Technology | MOSFET N-CH Enhancmnt Mode MOSFET | 20 V | Through Hole | TO-92-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 400 V | 160 mA | 12 Ohms | Enhancement | |||||
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siehe | Microchip Technology | MOSFET N-CH Enhancmnt Mode MOSFET | Through Hole | TO-92-3 | Reel | 1 Channel | Si | N-Channel | 400 V | 160 mA | 12 Ohms | Enhancement | ||||||||
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siehe | Microchip Technology | MOSFET N-CH Enhancmnt Mode MOSFET | 20 V | Through Hole | TO-92-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 400 V | 160 mA | 12 Ohms | Enhancement | |||||
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siehe | Microchip Technology | MOSFET N-CH Enhancmnt Mode MOSFET | Through Hole | TO-92-3 | Reel | 1 Channel | Si | N-Channel | 400 V | 175 mA | 12 Ohms | Enhancement | ||||||||
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siehe | Microchip Technology | MOSFET N-CH Enhancmnt Mode MOSFET | 20 V | Through Hole | TO-92-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 400 V | 175 mA | 12 Ohms | Enhancement |
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