- Vgs - Gate-Source Voltage :
- Mounting Style :
- Package / Case :
- Maximum Operating Temperature :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Channel Mode :
- Ausgewählter Filter :
6 Produkt
Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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Ein Angebot |
4,625
Verfügbar auf Lager
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IXYS Integrated Circuits | MOSFET N-Ch Depletion Mode Vertical DMOS FET | 15 V | SMD/SMT | SOT-223-3 | - 55 C | + 125 C | Reel | 1 Channel | Si | N-Channel | 800 V | 100 mA | 45 Ohms | Depletion | |||||
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siehe | Microchip Technology | MOSFET N-CH Enhancmnt Mode MOSFET | 20 V | Through Hole | TO-92-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 500 V | 50 mA | 45 Ohms | Enhancement | ||||||
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siehe | Microchip Technology | MOSFET N-CH Enhancmnt Mode MOSFET | 20 V | Through Hole | TO-92-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 500 V | 50 mA | 45 Ohms | Enhancement | ||||||
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siehe | Microchip Technology | MOSFET N-CH Enhancmnt Mode MOSFET | Through Hole | TO-92-3 | Reel | 1 Channel | Si | N-Channel | 500 V | 50 mA | 45 Ohms | Enhancement | |||||||||
|
siehe | Microchip Technology | MOSFET N-CH Enhancmnt Mode MOSFET | 20 V | Through Hole | TO-92-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 500 V | 50 mA | 45 Ohms | Enhancement | ||||||
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siehe | Infineon Technologies | MOSFET SMALL SIGNAL+P-CH | - 20 V | SMD/SMT | SOT-89-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 600 V | - 90 mA | 45 Ohms | - 1.3 V | 3.9 nC | Enhancement |
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