Schaffung einer zuverlässigen Handelsplattform für globale Hersteller und Lieferanten.
Vgs - Gate-Source Voltage :
Maximum Operating Temperature :
Transistor Polarity :
Vds - Drain-Source Breakdown Voltage :
Id - Continuous Drain Current :
6 Produkt
Bild Modell Preis Anzahl Lager Hersteller Beschreibung Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Packaging Number of Channels Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Channel Mode
CPC3980ZTR
1+
$0.3480
10+
$0.2680
100+
$0.1728
1000+
$0.1344
2000+
$0.1132
Ein Angebot
RFQ
4,625
Verfügbar auf Lager
IXYS Integrated Circuits MOSFET N-Ch Depletion Mode Vertical DMOS FET 15 V SMD/SMT SOT-223-3 - 55 C + 125 C Reel 1 Channel Si N-Channel 800 V 100 mA 45 Ohms     Depletion
VN0550N3-G P014
2000+
$0.2852
siehe
RFQ
Microchip Technology MOSFET N-CH Enhancmnt Mode MOSFET 20 V Through Hole TO-92-3 - 55 C + 150 C Reel 1 Channel Si N-Channel 500 V 50 mA 45 Ohms     Enhancement
VN0550N3-G P003
2000+
$0.2852
siehe
RFQ
Microchip Technology MOSFET N-CH Enhancmnt Mode MOSFET 20 V Through Hole TO-92-3 - 55 C + 150 C Reel 1 Channel Si N-Channel 500 V 50 mA 45 Ohms     Enhancement
VN0550N3-G P005
2000+
$0.2852
siehe
RFQ
Microchip Technology MOSFET N-CH Enhancmnt Mode MOSFET   Through Hole TO-92-3     Reel 1 Channel Si N-Channel 500 V 50 mA 45 Ohms     Enhancement
VN0550N3-G P002
2000+
$0.2852
siehe
RFQ
Microchip Technology MOSFET N-CH Enhancmnt Mode MOSFET 20 V Through Hole TO-92-3 - 55 C + 150 C Reel 1 Channel Si N-Channel 500 V 50 mA 45 Ohms     Enhancement
BSS225H6327XTSA1
siehe
RFQ
Infineon Technologies MOSFET SMALL SIGNAL+P-CH - 20 V SMD/SMT SOT-89-3 - 55 C + 150 C Reel 1 Channel Si P-Channel - 600 V - 90 mA 45 Ohms - 1.3 V 3.9 nC Enhancement