- Vgs - Gate-Source Voltage :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
- Ausgewählter Filter :
4 Produkt
| Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Ein Angebot |
2,368
Verfügbar auf Lager
|
ON Semiconductor | MOSFET NFET SO8FL 40V 373A 750MO | 20 V | SMD/SMT | SO-FL-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 370 A | 520 uOhms | 1.2 V | 181 nC | Enhancement | ||
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Ein Angebot |
2,997
Verfügbar auf Lager
|
ON Semiconductor | MOSFET NFET SO8FL 30V 305A 0.9MO | 20 V | SMD/SMT | SO-FL-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 370 A | 560 uOhms | 1.3 V | 139 nC | Enhancement | ||
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Ein Angebot |
1,500
Verfügbar auf Lager
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ON Semiconductor | MOSFET T6 40V HEFET | +/- 20 V | SMD/SMT | SO-FL-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 370 A | 0.52 mOhms | 1.2 V | 181 nC | Enhancement | ||
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|
Ein Angebot |
1,500
Verfügbar auf Lager
|
ON Semiconductor | MOSFET T6 40V HEFET | +/- 20 V | SMD/SMT | SO-FL-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 370 A | 0.52 mOhms | 1.2 V | 181 nC | Enhancement |
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