Schaffung einer zuverlässigen Handelsplattform für globale Hersteller und Lieferanten.
Package / Case :
Vds - Drain-Source Breakdown Voltage :
Rds On - Drain-Source Resistance :
Vgs th - Gate-Source Threshold Voltage :
Qg - Gate Charge :
2 Produkt
Bild Modell Preis Anzahl Lager Hersteller Beschreibung Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Packaging Number of Channels Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Channel Mode
IRFR8314TRPBF
1+
$0.5120
10+
$0.4360
100+
$0.3336
500+
$0.2948
2000+
$0.2064
Ein Angebot
RFQ
109
Verfügbar auf Lager
Infineon Technologies MOSFET 30V 179A 2.2 mOhm 36 nC Qg 20 V SMD/SMT TO-252-3 - 55 C + 175 C Reel 1 Channel Si N-Channel 30 V 179 A 2.2 mOhms 1.7 V 36 nC  
TK72E12N1,S1X
1+
$0.9200
10+
$0.7440
100+
$0.5920
500+
$0.5200
Ein Angebot
RFQ
550
Verfügbar auf Lager
Toshiba MOSFET N-Ch 120V 179A 225W UMOSVIII 130nC .0044 20 V Through Hole TO-220-3     Reel 1 Channel Si N-Channel 120 V 179 A 3.6 mOhms 2 V to 4 V 130 nC Enhancement