- Vgs - Gate-Source Voltage :
- Package / Case :
- Maximum Operating Temperature :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Ausgewählter Filter :
4 Produkt
| Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Ein Angebot |
2,975
Verfügbar auf Lager
|
Vishay / Siliconix | MOSFET Dual P-Channel 30V TSOP-6 | +/- 20 V, +/- 20 V | SMD/SMT | TSOP-6 | - 55 C | + 175 C | Reel | 2 Channel | Si | P-Channel | - 30 V, - 30 V | - 2.5 A, - 2.5 A | 0.14 Ohms, 0.14 Ohms | - 1.5 V, - 1.5 V | 11.1 nC, 11.1 nC | Enhancement | ||
|
|
siehe | ON Semiconductor | MOSFET PCH+PCH 4V DRIVE SERIES | +/- 20 V, +/- 20 V | SMD/SMT | VEC-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 60 V, - 60 V | - 2.5 A, - 2.5 A | 194 mOhms, 194 mOhms | - 2.6 V, - 2.6 V | 11 nC, 11 nC | Enhancement | |||
|
|
Ein Angebot |
3,000
Verfügbar auf Lager
|
ROHM Semiconductor | MOSFET 1.5V Drive Pch+Pch MOSFET | 0 V to - 8 V, 0 V to - 8 V | SMD/SMT | TSST-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 12 V, - 12 V | - 2.5 A, - 2.5 A | 44 mOhms, 44 mOhms | - 1 V, - 1 V | 16 nC, 16 nC | Enhancement | ||
|
|
Ein Angebot |
3,000
Verfügbar auf Lager
|
ROHM Semiconductor | MOSFET 4V Drive Pch+Pc Si MOSFET | +/- 20 V, +/- 20 V | SMD/SMT | TSST-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 30 V, - 30 V | - 2.5 A, - 2.5 A | 65 mOhms, 65 mOhms | - 2.5 V, - 2.5 V | 4.8 nC, 4.8 nC | Enhancement |
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