- Hersteller :
- Package / Case :
- Maximum Operating Temperature :
- Number of Channels :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
- Tradename :
- Ausgewählter Filter :
5 Produkt
| Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
Ein Angebot |
5,394
Verfügbar auf Lager
|
Fairchild Semiconductor | MOSFET MOSFET; -80V P-Chan PowerTrench | 20 V | SMD/SMT | SSOT-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 80 V | - 2.1 A | 147 mOhms | 14 nC | PowerTrench | ||||
|
|
Ein Angebot |
6,476
Verfügbar auf Lager
|
Fairchild Semiconductor | MOSFET -80V Dual P-Channel PowerTrench MOSFET | SMD/SMT | SO-8 | + 150 C | Reel | 2 Channel | Si | P-Channel | - 80 V | - 2.1 A | 183 mOhms | PowerTrench | |||||||
|
|
Ein Angebot |
4,032
Verfügbar auf Lager
|
Fairchild Semiconductor | MOSFET 500V P-Channel QFET | 30 V | SMD/SMT | Die | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 500 V | - 2.1 A | 4.9 Ohms | Enhancement | QFET | ||||
|
|
Ein Angebot |
1,887
Verfügbar auf Lager
|
Fairchild Semiconductor | MOSFET Trans MOS P-Ch 500V 2.1A 3-Pin 2+Tab | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 500 V | - 2.1 A | 4.9 Ohms | Enhancement | QFET | ||||
|
|
siehe | Panasonic | MOSFET Pch Power MOS FET - | 10 V | SMD/SMT | - 55 C | + 125 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 2.1 A | 100 mOhms | - 0.85 V | Enhancement |
1 / 1 Seite
