- Mounting Style :
- Package / Case :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Ausgewählter Filter :
3 Produkt
| Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Ein Angebot |
2,350
Verfügbar auf Lager
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Toshiba | MOSFET N-Ch DTMOSIV 600 V 139W 1350pF 15.8A | SMD/SMT | DFN8x8-5 | Reel | 1 Channel | Si | N-Channel | 600 V | 15.8 A | 190 mOhms | |||||||||
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Ein Angebot |
792
Verfügbar auf Lager
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Toshiba | MOSFET DTMOSIV 600V 190mOhm 15.8A 130W 1350pF | 30 V | SMD/SMT | TO-262-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 15.8 A | 190 mOhms | 2.7 V to 3.7 V | 38 nC | DTMOSIV | |||
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siehe | Toshiba | MOSFET N-Ch DTMOSIV 600 V 130W 1350pF 15.8A | 30 V | Through Hole | TO-262-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 15.8 A | 160 mOhms | 3.7 V | 38 nC | Enhancement |
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