- Vgs - Gate-Source Voltage :
- Package / Case :
- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Ausgewählter Filter :
11 Produkt
Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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Ein Angebot |
2,220
Verfügbar auf Lager
|
Fairchild Semiconductor | MOSFET SOT-223 P-CH ENHANCE | 20 V | SMD/SMT | SOT-223-4 | - 65 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 7.5 A | 26 mOhms | Enhancement | ||||||
|
Ein Angebot |
1,627
Verfügbar auf Lager
|
Diodes Incorporated | MOSFET 30V P Chnl UMOS | 20 V | SMD/SMT | SOT-223-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 7.5 A | 45 mOhms | Enhancement | ||||||
|
Ein Angebot |
3,797
Verfügbar auf Lager
|
Diodes Incorporated | MOSFET MOSFET,P-CHANNEL | 25 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 7.5 A | 20 mOhms | - 2.5 V | 35.4 nC | Enhancement | ||||
|
Ein Angebot |
2,323
Verfügbar auf Lager
|
ON Semiconductor | MOSFET SWITCHING DEVICE | SMD/SMT | ECH-8 | Reel | 1 Channel | Si | P-Channel | - 30 V | - 7.5 A | 25 mOhms | ||||||||||
|
Ein Angebot |
2,528
Verfügbar auf Lager
|
Infineon Technologies | MOSFET SMALL SIGNAL+P-CH | 12 V | SMD/SMT | TSOP-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 7.5 A | 22 mOhms | 700 mV | 5.8 nC | Enhancement | ||||
|
Ein Angebot |
808
Verfügbar auf Lager
|
Vishay / Siliconix | MOSFET P-Channel 30V AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TSOP-6 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 7.5 A | 0.035 Ohms | - 2.5 V | 23.5 nC | Enhancement | TrenchFET | |||
|
Ein Angebot |
3,965
Verfügbar auf Lager
|
ROHM Semiconductor | MOSFET I2C BUS 32Kbit( EEPROM | +/- 20 V | SMD/SMT | SOP-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 7.5 A | 18 mOhms | - 2.5 V | 25 nC | Enhancement | ||||
|
Ein Angebot |
2,750
Verfügbar auf Lager
|
ROHM Semiconductor | MOSFET RF4E075AT which is High Power small mold package is suitable... | +/- 20 V | SMD/SMT | HUML2020L-8 | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 7.5 A | 16.7 mOhms | - 2.5 V | 22 nC | Enhancement | |||||
|
Ein Angebot |
2,192
Verfügbar auf Lager
|
ROHM Semiconductor | MOSFET Pch -30V -7.5A MOSFET | SMD/SMT | SOP-8 | + 150 C | Reel | Si | P-Channel | - 30 V | - 7.5 A | 25 mOhms | ||||||||||
|
Ein Angebot |
336
Verfügbar auf Lager
|
ROHM Semiconductor | MOSFET 30V 7.5A P CHANNEL | 20 V | SMD/SMT | SOP-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 7.5 A | 21 mOhms | Enhancement | ||||||
|
siehe | Toshiba | MOSFET MOSFET P-Ch 40V 7.5A Rdson=0.03Ohm | 20 V | SMD/SMT | SOP-Advance-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 40 V | - 7.5 A | 30 mOhms | Enhancement |
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