- Package / Case :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Ausgewählter Filter :
2 Produkt
Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Ein Angebot |
3,589
Verfügbar auf Lager
|
Toshiba | MOSFET Small Signal MOSFET | 10 V, 10 V | SMD/SMT | ES6-6 | + 150 C | Reel | 2 Channel | Si | N-Channel | 20 V, 20 V | 180 mA, 180 mA | 20 Ohms, 20 Ohms | 400 mV, 400 mV | Enhancement | ||||
|
Ein Angebot |
5,726
Verfügbar auf Lager
|
Toshiba | MOSFET Small-signal MOSFET | 10 V, 10 V | SMD/SMT | SOT-363-6 | + 150 C | Reel | 2 Channel | Si | N-Channel | 20 V, 20 V | 500 mA, 500 mA | 460 mOhms, 460 mOhms | 350 mV, 350 mV | 1.23 nC, 1.23 nC | Enhancement |
1 / 1 Seite