- Mounting Style :
- Package / Case :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Ausgewählter Filter :
5 Produkt
Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | |
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|
Ein Angebot |
2,000
Verfügbar auf Lager
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Taiwan Semiconductor | MOSFET 800V 10A N Channel Power Mosfet | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 800 V | 9.5 A | 1.05 Ohms | ||||||
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siehe | Taiwan Semiconductor | MOSFET 800V 10A N Channel Mosfet | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 800 V | 9.5 A | 1.05 Ohms | |||||||
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siehe | Taiwan Semiconductor | MOSFET 800V N Channel Pwr MOSFET | 30 V | SMD/SMT | SOT-223-3 | Reel | 1 Channel | Si | N-Channel | 800 V | 300 mA | 21.6 Ohms | 5 V | 6 nC | ||||
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siehe | Taiwan Semiconductor | MOSFET 800V 8A N Channel Mosfet | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 800 V | 8 A | 1.4 Ohms | |||||||
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siehe | Taiwan Semiconductor | MOSFET 800V 4A N Channel Mosfet | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 800 V | 4 A | 3 Ohms |
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