- Package / Case :
- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Number of Channels :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
-
- 1.7 mOhms (1)
- 1.7 MOhms, 1.7 MOhms (1)
- 1.8 mOhms (1)
- 13 GOhms (2)
- 14 GOhms (3)
- 14 Ohms (3)
- 14 Ohms, 14 Ohms (4)
- 16 GOhms (3)
- 17 GOhms (3)
- 2 mOhms (1)
- 2.1 mOhms (1)
- 2.2 MOhms, 2.2 MOhms (1)
- 2.3 mOhms (1)
- 2.3 MOhms, 2.3 MOhms (1)
- 2.4 mOhms (1)
- 2.4 MOhms, 2.4 MOhms (1)
- 2.5 mOhms (1)
- 2.5 MOhms, 2.5 MOhms (1)
- 2.6 mOhms (1)
- 2.6 MOhms, 2.6 MOhms (1)
- 2.7 MOhms, 2.7 MOhms (1)
- 2.8 mOhms (1)
- 2.8 MOhms, 2.8 MOhms (1)
- 23 Ohms (1)
- 25 Ohms (7)
- 50 Ohms, 180 Ohms (1)
- Vgs th - Gate-Source Threshold Voltage :
-
- - 10 mV (2)
- - 20 mV, - 20 mV (1)
- -20 mV (1)
- 0.2 V (1)
- 0.4 V (2)
- 0.8 V (2)
- 1.4 V (2)
- 1.68 V (3)
- 1.68 V, 1.68 V (1)
- 1.78 V (4)
- 1.98 V (4)
- 180 mV, 180 mV (1)
- 2.08 V (4)
- 2.18 V, 2.18 V (1)
- 2.28 V (1)
- 2.28 V, 2.28 V (1)
- 2.38 V (1)
- 2.38 V, 2.38 V (1)
- 2.48 V (1)
- 2.48 V, 2.48 V (1)
- 2.58 V (1)
- 2.58 V, 2.58 V (1)
- 2.68 V (1)
- 2.68 V, 2.68 V (1)
- 2.78 V (1)
- 2.78 V, 2.78 V (1)
- 400 mV, - 400 mV (1)
- 780 mV (2)
- Channel Mode :
- Ausgewählter Filter :
44 Produkt
| Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Ein Angebot |
227
Verfügbar auf Lager
|
Advanced Linear Devices | MOSFET Quad MOSFET ARRAY Vt=2.70V | 10.6 V | SMD/SMT | SOIC-16 | 0 C | + 70 C | Tube | 4 Channel | Si | N-Channel | 10.6 V | 10 mA | 23 Ohms | 2.68 V | Enhancement | SAB | ||
|
|
Ein Angebot |
46
Verfügbar auf Lager
|
Advanced Linear Devices | MOSFET Dual MOSFET ARRAY Vt=2.60V | 10.6 V, 10.6 V | SMD/SMT | SOIC-8 | 0 C | + 70 C | Tube | 2 Channel | Si | N-Channel | 10.6 V, 10.6 V | 1 uA, 1 uA | 2.6 MOhms, 2.6 MOhms | 2.58 V, 2.58 V | Enhancement | SAB | ||
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|
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Ein Angebot |
22
Verfügbar auf Lager
|
Advanced Linear Devices | MOSFET Dual MOSFET ARRAY Vt=2.70V | 10.6 V, 10.6 V | SMD/SMT | SOIC-8 | 0 C | + 70 C | Tube | 2 Channel | Si | N-Channel | 10.6 V, 10.6 V | 1 uA, 1 uA | 2.7 MOhms, 2.7 MOhms | 2.68 V, 2.68 V | Enhancement | SAB | ||
|
|
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Ein Angebot |
48
Verfügbar auf Lager
|
Advanced Linear Devices | MOSFET Quad MOSFET ARRAY Vt=2.60V | 10.6 V | SMD/SMT | SOIC-16 | 0 C | + 70 C | Tube | 4 Channel | Si | N-Channel | 10.6 V | 1 uA | 2.6 mOhms | 2.58 V | Enhancement | SAB | ||
|
|
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Ein Angebot |
50
Verfügbar auf Lager
|
Advanced Linear Devices | MOSFET Quad MOSFET ARRAY Vt=2.50V | 10.6 V | SMD/SMT | SOIC-16 | 0 C | + 70 C | Tube | 4 Channel | Si | N-Channel | 10.6 V | 1 uA | 2.5 mOhms | 2.48 V | Enhancement | SAB | ||
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|
|
Ein Angebot |
226
Verfügbar auf Lager
|
Advanced Linear Devices | MOSFET Dual SAB MOSFET ARRAY VT=2.20V | 10.6 V, 10.6 V | SMD/SMT | SOIC-8 | - 40 C | + 85 C | Tube | 2 Channel | Si | N-Channel | 10.6 V, 10.6 V | 1 uA, 1 uA | 2.2 MOhms, 2.2 MOhms | 2.18 V, 2.18 V | Enhancement | |||
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|
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Ein Angebot |
100
Verfügbar auf Lager
|
Advanced Linear Devices | MOSFET Quad MOSFET ARRAY Vt=2.30V | 10.6 V | SMD/SMT | SOIC-16 | 0 C | + 70 C | Tube | 4 Channel | Si | N-Channel | 10.6 V | 1 uA | 2.3 mOhms | 2.28 V | Enhancement | SAB | ||
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|
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Ein Angebot |
18
Verfügbar auf Lager
|
Advanced Linear Devices | MOSFET Quad SAB MOSFET ARRAY VT=1.80V | 10.6 V | SMD/SMT | SOIC-16 | 0 C | + 70 C | Tube | 4 Channel | Si | N-Channel | 10.6 V | 1 uA | 1.8 mOhms | 1.78 V | Enhancement | |||
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|
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Ein Angebot |
42
Verfügbar auf Lager
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Advanced Linear Devices | MOSFET Dual N-Ch Matched Pr VGS=0.0V | 10.6 V | SMD/SMT | SOIC-8 | 0 C | + 70 C | Tube | 2 Channel | Si | N-Channel | 10 V | 79 mA | 14 Ohms | 1.4 V | Enhancement | EPAD | ||
|
|
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Ein Angebot |
22
Verfügbar auf Lager
|
Advanced Linear Devices | MOSFET Dual N-Ch Matched Pr VGS=0.0V | 10.6 V, 10.6 V | SMD/SMT | SOIC-8 | 0 C | + 70 C | Tube | 2 Channel | Si | N-Channel | 10 V, 10 V | 79 mA, 79 mA | 14 Ohms, 14 Ohms | 780 mV | Enhancement | EPAD | ||
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Ein Angebot |
12
Verfügbar auf Lager
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Advanced Linear Devices | MOSFET Quad SAB MOSFET ARRAY VT=2.00V | 10.6 V | SMD/SMT | SOIC-16 | 0 C | + 70 C | Tube | 4 Channel | Si | N-Channel | 10.6 V | 1 uA | 2 mOhms | 1.98 V | Enhancement | |||
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|
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Ein Angebot |
20
Verfügbar auf Lager
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Advanced Linear Devices | MOSFET Quad SAB MOSFET ARRAY VT=2.10V | 10.6 V | SMD/SMT | SOIC-16 | 0 C | + 70 C | Tube | 4 Channel | Si | N-Channel | 10.6 V | 1 uA | 2.1 mOhms | 2.08 V | Enhancement | |||
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|
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Ein Angebot |
31
Verfügbar auf Lager
|
Advanced Linear Devices | MOSFET Dual SAB MOSFET ARRAY VT=1.70V | 10.6 V, 10.6 V | SMD/SMT | SOIC-8 | 0 C | + 70 C | Tube | 2 Channel | Si | N-Channel | 10.6 V, 10.6 V | 1 uA, 1 uA | 1.7 MOhms, 1.7 MOhms | 1.68 V, 1.68 V | Enhancement | |||
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Ein Angebot |
12
Verfügbar auf Lager
|
Advanced Linear Devices | MOSFET Dual MOSFET ARRAY Vt=2.30V | 10.6 V, 10.6 V | SMD/SMT | SOIC-8 | 0 C | + 70 C | Tube | 2 Channel | Si | N-Channel | 10.6 V, 10.6 V | 1 uA, 1 uA | 2.3 MOhms, 2.3 MOhms | 2.28 V, 2.28 V | Enhancement | SAB | ||
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Ein Angebot |
17
Verfügbar auf Lager
|
Advanced Linear Devices | MOSFET Dual MOSFET ARRAY Vt=2.40V | 10.6 V, 10.6 V | SMD/SMT | SOIC-8 | 0 C | + 70 C | Tube | 2 Channel | Si | N-Channel | 10.6 V, 10.6 V | 1 uA, 1 uA | 2.4 MOhms, 2.4 MOhms | 2.38 V, 2.38 V | Enhancement | SAB | ||
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Ein Angebot |
23
Verfügbar auf Lager
|
Advanced Linear Devices | MOSFET PREC N-CHAN EPAD CMOS MOSFET ARRAY | 10.6 V | SMD/SMT | SOIC-16 | 0 C | + 70 C | Tube | 4 Channel | Si | N-Channel | 10 V | 70 mA | 25 Ohms | - 10 mV | Depletion | |||
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Ein Angebot |
38
Verfügbar auf Lager
|
Advanced Linear Devices | MOSFET Quad MOSFET ARRAY Vt=2.80V | 10.6 V | SMD/SMT | SOIC-16 | 0 C | + 70 C | Tube | 4 Channel | Si | N-Channel | 10.6 V | 1 uA | 2.8 mOhms | 2.78 V | Enhancement | SAB | ||
|
|
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Ein Angebot |
39
Verfügbar auf Lager
|
Advanced Linear Devices | MOSFET Quad SAB MOSFET ARRAY VT=1.70V | 10.6 V | SMD/SMT | SOIC-16 | 0 C | + 70 C | Tube | 4 Channel | Si | N-Channel | 10.6 V | 1 uA | 1.7 mOhms | 1.68 V | Enhancement | |||
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Ein Angebot |
12
Verfügbar auf Lager
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Advanced Linear Devices | MOSFET Dual P&N-Ch. Pair | 10.6 V | SMD/SMT | SOIC-14 | 0 C | + 70 C | Tube | 4 Channel | Si | N-Channel, P-Channel | 12 V, - 12 V | 40 mA, - 16 mA | 50 Ohms, 180 Ohms | 400 mV, - 400 mV | Enhancement | |||
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Ein Angebot |
11
Verfügbar auf Lager
|
Advanced Linear Devices | MOSFET Dual MOSFET ARRAY Vt=2.80V | 10.6 V, 10.6 V | SMD/SMT | SOIC-8 | 0 C | + 70 C | Tube | 2 Channel | Si | N-Channel | 10.6 V, 10.6 V | 1 uA, 1 uA | 2.8 MOhms, 2.8 MOhms | 2.78 V, 2.78 V | Enhancement | SAB | ||
|
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|
Ein Angebot |
16
Verfügbar auf Lager
|
Advanced Linear Devices | MOSFET Dual N-Ch EPAD FET Array VGS=0.0V | 10.6 V, 10.6 V | SMD/SMT | SOIC-8 | 0 C | + 70 C | Tube | 2 Channel | Si | N-Channel | 10 V, 10 V | 79 mA, 79 mA | 14 Ohms, 14 Ohms | - 20 mV, - 20 mV | Depletion | |||
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|
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Ein Angebot |
38
Verfügbar auf Lager
|
Advanced Linear Devices | MOSFET Quad N-Ch Matched Pr VGS=0.0V | 10.6 V | SMD/SMT | SOIC-16 | 0 C | + 70 C | Tube | 4 Channel | Si | N-Channel | 10 V | 70 mA | 25 Ohms | 780 mV | Enhancement | EPAD | ||
|
|
|
Ein Angebot |
40
Verfügbar auf Lager
|
Advanced Linear Devices | MOSFET Dual N-Ch EPAD FET Array VGS=0.0V | 10.6 V, 10.6 V | SMD/SMT | SOIC-8 | 0 C | + 70 C | Tube | 2 Channel | Si | N-Channel | 10 V, 10 V | 79 mA, 79 mA | 14 Ohms, 14 Ohms | - 10 mV | Depletion | |||
|
|
|
Ein Angebot |
48
Verfügbar auf Lager
|
Advanced Linear Devices | MOSFET Dual N-Ch Matched Pr VGS=0.0V | 10.6 V, 10.6 V | SMD/SMT | SOIC-8 | 0 C | + 70 C | Tube | 2 Channel | Si | N-Channel | 10 V, 10 V | 79 mA, 79 mA | 14 Ohms, 14 Ohms | 180 mV, 180 mV | Enhancement | EPAD | ||
|
|
|
Ein Angebot |
92
Verfügbar auf Lager
|
Advanced Linear Devices | MOSFET Dual MOSFET ARRAY Vt=2.50V | 10.6 V, 10.6 V | SMD/SMT | SOIC-8 | 0 C | + 70 C | Tube | 2 Channel | Si | N-Channel | 10.6 V, 10.6 V | 1 uA, 1 uA | 2.5 MOhms, 2.5 MOhms | 2.48 V, 2.48 V | Enhancement | SAB | ||
|
|
|
Ein Angebot |
92
Verfügbar auf Lager
|
Advanced Linear Devices | MOSFET Quad MOSFET ARRAY Vt=2.40V | 10.6 V | SMD/SMT | SOIC-16 | 0 C | + 70 C | Tube | 4 Channel | Si | N-Channel | 10.6 V | 1 uA | 2.4 mOhms | 2.38 V | Enhancement | SAB | ||
|
|
|
siehe | Advanced Linear Devices | MOSFET Dual SAB MOSFET ARRAY VT=2.10V | 10.6 V | SMD/SMT | SOIC-8 | 0 C | + 70 C | Tube | 2 Channel | Si | N-Channel | 10.6 V | 80 mA | 17 GOhms | 2.08 V | Enhancement | ||||
|
|
|
siehe | Advanced Linear Devices | MOSFET Dual SAB MOSFET ARRAY VT=2.00V | 10.6 V | SMD/SMT | SOIC-8 | 0 C | + 70 C | Tube | 2 Channel | Si | N-Channel | 10.6 V | 80 mA | 16 GOhms | 1.98 V | Enhancement | ||||
|
|
|
siehe | Advanced Linear Devices | MOSFET Dual N-Ch Matched Pr VGS=0.0V | 10.6 V | SMD/SMT | SOIC-8 | 0 C | + 70 C | Tube | 2 Channel | Si | N-Channel | 10 V | 79 mA | 14 Ohms | 0.4 V | Enhancement | EPAD | |||
|
|
|
siehe | Advanced Linear Devices | MOSFET Dual SAB MOSFET ARRAY VT=1.80V | 10.6 V | SMD/SMT | SOIC-8 | 0 C | + 70 C | Tube | 2 Channel | Si | N-Channel | 10.6 V | 80 mA | 14 GOhms | 1.78 V | Enhancement |
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