- Vgs - Gate-Source Voltage :
- Mounting Style :
- Package / Case :
- Packaging :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
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- Rds On - Drain-Source Resistance :
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- 880 mOhms (1)
- 90 mOhms (6)
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- Qg - Gate Charge :
-
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- 60 nC (2)
- 72 nC (1)
- 80 nC (6)
- 90 nC (2)
- 975 nC (2)
- Tradename :
374 Produkt
| Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Microsemi | MOSFET Power MOSFET - MOS8 | 30 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Reel | Si | N-Channel | 1000 V | 37 A | 290 mOhms | 4 V | 305 nC | Enhancement | POWER MOS 8 | |||
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Microsemi | MOSFET Power FREDFET - MOS8 | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Reel | Si | N-Channel | 500 V | 24 A | 240 mOhms | 4 V | 90 nC | Enhancement | ||||
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Microsemi | MOSFET Power MOSFET - CoolMOS | 20 V | Through Hole | T-MAX-3 | - 55 C | + 150 C | Si | N-Channel | 650 V, 650 V | 94 A, 94 A | 30 mOhms, 30 mOhms | 3 V | 580 nC | Enhancement | |||||
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Verfügbar auf Lager
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Microsemi | MOSFET Power MOSFET - CoolMOS | 20 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Reel | Si | N-Channel | 600 V | 94 A | 30 mOhms | 3 V | 505 nC | Enhancement | ||||
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Microsemi | MOSFET Power MOSFET - MOS7 | 30 V | Screw Mount | SOT-227-4 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 1000 V | 25 A | 350 mOhms | 3 V | 186 nC | Enhancement | ||||
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Microsemi | MOSFET POWER MOS V 800V 27A | 30 V | Through Hole | TO-264-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 800 V | 27 A | 300 mOhms | 4 V | 340 nC | Enhancement | ||||
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Microsemi | MOSFET Power MOSFET - MOS8 | 30 V | Through Hole | T-MAX-3 | - 55 C | + 150 C | Si | N-Channel | 600 V | 70 A | 75 mOhms | 4 V | 330 nC | Enhancement | POWER MOS 8 | ||||
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Microsemi | MOSFET Power FREDFET - MOS8 | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 600 V | 45 A | 120 mOhms | 2.5 V | 215 nC | Enhancement | ||||
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Microsemi | MOSFET Power MOSFET - MOS8 | 30 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Reel | Si | N-Channel | 500 V | 56 A | 85 mOhms | 4 V | 220 nC | Enhancement | POWER MOS 8 | |||
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Microsemi | MOSFET Power MOSFET - MOS8 | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Si | N-Channel | 1200 V | 14 A | 870 mOhms | 4 V | 145 nC | Enhancement | POWER MOS 8 | ||||
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Microsemi | MOSFET Power FREDFET - MOS8 | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Reel | Si | N-Channel | 1200 V | 7 A | 1.57 Ohms | 4 V | 80 nC | Enhancement | POWER MOS 8 | |||
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Microsemi | MOSFET Power MOSFET - MOS8 | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Reel | Si | N-Channel | 1000 V | 8 A | 1.53 Ohms | 4 V | 60 nC | Enhancement | POWER MOS 8 | |||
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Verfügbar auf Lager
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Microsemi | MOSFET Power MOSFET - MOS8 | 30 V | Through Hole | TO-264-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 600 V | 45 A | 130 mOhms | 3 V | 215 nC | Enhancement | ||||
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Verfügbar auf Lager
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Microsemi | MOSFET Power FREDFET - MOS8 | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Reel | Si | N-Channel | 1200 V | 14 A | 910 mOhms | 4 V | 145 nC | Enhancement | POWER MOS 8 | |||
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Ein Angebot |
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Verfügbar auf Lager
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Microsemi | MOSFET Power MOSFET - SiC | Bulk | SiC | ||||||||||||||||
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Verfügbar auf Lager
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Microsemi | MOSFET Power MOSFET - MOS8 | 30 V | Through Hole | TO-264-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 600 V | 60 A | 90 mOhms | 3 V | 280 nC | Enhancement | ||||
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Verfügbar auf Lager
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Microsemi | MOSFET Power FREDFET - MOS8 | 30 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Si | N-Channel | 600 V | 45 A | 150 mOhms | 4 V | 215 nC | Enhancement | |||||
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Ein Angebot |
42
Verfügbar auf Lager
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Microsemi | MOSFET Power MOSFET - MOS5 | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Si | N-Channel | 200 V | 56 A | 45 mOhms | 4 V | 130 nC | Enhancement |
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