- Vgs - Gate-Source Voltage :
- Package / Case :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Ausgewählter Filter :
5 Produkt
Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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Ein Angebot |
2,894
Verfügbar auf Lager
|
Diodes Incorporated | MOSFET 25V P-Ch Enh FET 27.2pF 0.35nC | - 4.5 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 25 V | - 700 mA | 13 Ohms | - 0.96 V | 0.35 nC | Enhancement | |||
|
Ein Angebot |
341
Verfügbar auf Lager
|
Diodes Incorporated | MOSFET 30V N-Ch Enh Mode FET 12Vgss 1.05W | 12 V | SMD/SMT | X2-DFN0606-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 220 mA | 4.5 Ohms | 1 V | 0.35 nC | Enhancement | |||
|
Ein Angebot |
9,905
Verfügbar auf Lager
|
Diodes Incorporated | MOSFET P-Ch 30V 0.35VnC Enh Mode FET -0.2A | 10 V | SMD/SMT | X2-DFN0606-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 200 mA | 10 Ohms | - 1 V | 0.35 nC | Enhancement | |||
|
Ein Angebot |
240,000
Verfügbar auf Lager
|
Diodes Incorporated | MOSFET 25V P-Ch Enh FET 360pD -25Vdss -8Vgss | - 8 V | SMD/SMT | X2-DFN0806-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 25 V | - 166 mA | 10 Ohms | - 0.9 V | 0.35 nC | Enhancement | |||
|
siehe | Diodes Incorporated | MOSFET 25V P-Ch Enh Mode FET -8Vgss 0.33W | - 8 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 25 V | - 17 A | 13 Ohms | - 0.96 V | 0.35 nC | Enhancement |
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