- Hersteller :
- Mounting Style :
- Package / Case :
- Series :
- Pd - Power Dissipation :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Drain-Source Current at Vgs=0 :
- Ausgewählter Filter :
4 Produkt
Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Mounting Style | Package / Case | Maximum Operating Temperature | Series | Packaging | Pd - Power Dissipation | Configuration | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Vgs - Gate-Source Breakdown Voltage | Drain-Source Current at Vgs=0 | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Ein Angebot |
5,763
Verfügbar auf Lager
|
ON Semiconductor | JFET NCH J-FET | SMD/SMT | SC-59 | + 125 C | 2SK545 | Reel | 100 mW | Single | N-Channel | 40 V | 1 mA | - 40 V | 55 uA | |||
|
Ein Angebot |
1,356
Verfügbar auf Lager
|
Toshiba | JFET N-CH FET 1.0dB AMP AUDIO -50 VGDS 10mA | SMD/SMT | SC-70 | + 125 C | 2SK880 | Reel | 100 mW | N-Channel | 10 V | 0.5 mA | - 50 V | 1.2 mA | ||||
|
siehe | InterFET | JFET N-Channel Silicon JFET-Transistor | Through Hole | TO-72-3 | + 125 C | 2N411 | Bulk | 300 mW | Single | N-Channel | - 40 V | 50 mA | - 40 V | 90 uA | ||||
|
siehe | Toshiba | JFET N-Ch 10mA -50V FET 150 mW Audio LNA | SMD/SMT | SOT-346-3 | + 125 C | 2SK209 | Reel | 150 mW | Single | N-Channel | 14 mA |
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