Schaffung einer zuverlässigen Handelsplattform für globale Hersteller und Lieferanten.
Pd - Power Dissipation :
Vds - Drain-Source Breakdown Voltage :
Id - Continuous Drain Current :
Rds On - Drain-Source Resistance :
Vgs - Gate-Source Breakdown Voltage :
Drain-Source Current at Vgs=0 :
4 Produkt
Bild Modell Preis Anzahl Lager Hersteller Beschreibung Mounting Style Package / Case Maximum Operating Temperature Series Packaging Pd - Power Dissipation Configuration Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs - Gate-Source Breakdown Voltage Drain-Source Current at Vgs=0
UJN1208K
1+
$9.5960
5+
$9.1640
10+
$8.8800
25+
$8.1600
Ein Angebot
RFQ
99
Verfügbar auf Lager
USCi JFET 1200V/80mOhm SiC JFET, N-ON, TO-247 Through Hole TO-247-3 + 175 C     136 W Single N-Channel 1200 V 21 A 230 mOhms +/- 20 V 21 A
UJN1205K
1+
$13.5960
5+
$12.9840
10+
$12.5800
25+
$11.5600
Ein Angebot
RFQ
108
Verfügbar auf Lager
USCi JFET 1200V/45mOhm SiC JFET N-ON Through Hole TO-247-3 + 175 C   Tube 230 W Single N-Channel 1.2 kV 38 A 35 mOhms - 20 V to + 20 V  
GA03JT12-247
1260+
$1.9800
2520+
$1.9040
siehe
RFQ
GeneSiC Semiconductor JFET SiC Super Junc Trans 1200V-Rds 550mO-3A Through Hole TO-247AB-3 + 175 C GA03 Tube 5 W Single N-Channel 1200 V 3 A 470 mOhms    
IJW120R070T1
1+
$15.7400
2+
$15.5640
5+
$15.3920
10+
$14.6880
Ein Angebot
RFQ
236
Verfügbar auf Lager
Infineon Technologies JFET SIC CHIP/DISCRETE Through Hole TO-247-3 + 175 C XJY120R070 Tube 238 W Single N-Channel 1200 V 114 A 70 mOhms 2 V 35 A