- Hersteller :
- Package / Case :
- Series :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
- Vgs - Gate-Source Breakdown Voltage :
- Ausgewählter Filter :
4 Produkt
Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Mounting Style | Package / Case | Maximum Operating Temperature | Series | Packaging | Pd - Power Dissipation | Configuration | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Breakdown Voltage | Drain-Source Current at Vgs=0 | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Ein Angebot |
99
Verfügbar auf Lager
|
USCi | JFET 1200V/80mOhm SiC JFET, N-ON, TO-247 | Through Hole | TO-247-3 | + 175 C | 136 W | Single | N-Channel | 1200 V | 21 A | 230 mOhms | +/- 20 V | 21 A | |||||
|
Ein Angebot |
108
Verfügbar auf Lager
|
USCi | JFET 1200V/45mOhm SiC JFET N-ON | Through Hole | TO-247-3 | + 175 C | Tube | 230 W | Single | N-Channel | 1.2 kV | 38 A | 35 mOhms | - 20 V to + 20 V | |||||
|
siehe | GeneSiC Semiconductor | JFET SiC Super Junc Trans 1200V-Rds 550mO-3A | Through Hole | TO-247AB-3 | + 175 C | GA03 | Tube | 5 W | Single | N-Channel | 1200 V | 3 A | 470 mOhms | ||||||
|
Ein Angebot |
236
Verfügbar auf Lager
|
Infineon Technologies | JFET SIC CHIP/DISCRETE | Through Hole | TO-247-3 | + 175 C | XJY120R070 | Tube | 238 W | Single | N-Channel | 1200 V | 114 A | 70 mOhms | 2 V | 35 A |
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