- Hersteller :
- Package / Case :
- Pd - Power Dissipation :
- Vgs - Gate-Source Breakdown Voltage :
- Ausgewählter Filter :
2 Produkt
Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Mounting Style | Package / Case | Maximum Operating Temperature | Series | Packaging | Pd - Power Dissipation | Configuration | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Breakdown Voltage | Drain-Source Current at Vgs=0 | |
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Ein Angebot |
2,183
Verfügbar auf Lager
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Central Semiconductor | JFET 40Vgd N-Ch JFET 100 Rdson 625mW | Through Hole | TO-92-3 | + 150 C | PN43 | Bulk | 625 mW | Single | N-Channel | 20 V | 12 mA | 100 Ohms | 40 V | ||||
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siehe | InterFET | JFET N-Channel 50mA | Through Hole | TO-18-3 | 2N43 | Bulk | 1.8 W | Single | N-Channel | 20 V | 12 mA | 100 Ohms | - 40 V | 30 mA |
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