Schaffung einer zuverlässigen Handelsplattform für globale Hersteller und Lieferanten.
Pd - Power Dissipation :
Vds - Drain-Source Breakdown Voltage :
Id - Continuous Drain Current :
Rds On - Drain-Source Resistance :
Vgs - Gate-Source Breakdown Voltage :
Drain-Source Current at Vgs=0 :
3 Produkt
Bild Modell Preis Anzahl Lager Hersteller Beschreibung Mounting Style Package / Case Maximum Operating Temperature Series Packaging Pd - Power Dissipation Configuration Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs - Gate-Source Breakdown Voltage Drain-Source Current at Vgs=0
UJN1205K
1+
$13.5960
5+
$12.9840
10+
$12.5800
25+
$11.5600
Ein Angebot
RFQ
108
Verfügbar auf Lager
USCi JFET 1200V/45mOhm SiC JFET N-ON Through Hole TO-247-3 + 175 C   Tube 230 W Single N-Channel 1.2 kV 38 A 35 mOhms - 20 V to + 20 V  
IJW120R100T1
1+
$11.6920
5+
$11.5720
10+
$10.7840
25+
$10.3000
Ein Angebot
RFQ
186
Verfügbar auf Lager
Infineon Technologies JFET SIC CHIP/DISCRETE Through Hole TO-247-3 + 175 C XJY120R100 Tube 190 W   N-Channel 1200 V 78 A 100 mOhms 2 V 26 A
IJW120R070T1
1+
$15.7400
2+
$15.5640
5+
$15.3920
10+
$14.6880
Ein Angebot
RFQ
236
Verfügbar auf Lager
Infineon Technologies JFET SIC CHIP/DISCRETE Through Hole TO-247-3 + 175 C XJY120R070 Tube 238 W Single N-Channel 1200 V 114 A 70 mOhms 2 V 35 A