1 Produkt
| Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Configuration | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | |
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Ein Angebot |
1,732
Verfügbar auf Lager
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Fairchild Semiconductor | IGBT Transistors 1250V 20A Shorted Anode IGBT | Through Hole | TO-3 | + 175 C | Tube | 250 W | Single | 1.25 kV | 2 V | 40 A | +/- 500 nA | +/- 25 V |
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