Modell	Preis	Anzahl		Lager	Hersteller	Beschreibung	Mounting Style	Package / Case	Maximum Operating Temperature	Packaging	Pd - Power Dissipation	Configuration	Collector- Emitter Voltage VCEO Max	Collector-Emitter Saturation Voltage	Continuous Collector Current at 25 C	Gate-Emitter Leakage Current	Maximum Gate Emitter Voltage
IKA15N65H5	1+ $0.8840 10+ $0.7520 100+ $0.6000 500+ $0.5280	Ein Angebot	PDF RFQ	500 Verfügbar auf Lager	Infineon Technologies	IGBT Transistors ENGINEERING SAMPLES TRENCHSTOP...	Through Hole	TO-220-3	+ 175 C		33.3 W	Single	650 V	1.95 V	14 A	100 nA	20 V
IKA15N65H5XKSA1	1+ $0.8840 10+ $0.7520 100+ $0.6000 500+ $0.5280	Ein Angebot	PDF RFQ	438 Verfügbar auf Lager	Infineon Technologies	IGBT Transistors IGBT PRODUCTS	Through Hole	TO-220-3	+ 175 C	Tube	33.3 W	Single	650 V	1.95 V	14 A	100 nA	20 V
IKA15N65F5XKSA1	1+ $0.8840 10+ $0.7520 100+ $0.6000 500+ $0.5280	Ein Angebot	PDF RFQ	492 Verfügbar auf Lager	Infineon Technologies	IGBT Transistors IGBT PRODUCTS	Through Hole	TO-220-3	+ 175 C	Tube	33.3 W	Single	650 V	1.9 V	14 A	100 nA	20 V
IKA15N65F5	1+ $0.8840 10+ $0.7520 100+ $0.6000 500+ $0.5280	Ein Angebot	PDF RFQ	500 Verfügbar auf Lager	Infineon Technologies	IGBT Transistors ENGINEERING SAMPLES TRENCHSTOP...	Through Hole	TO-220-3	+ 175 C		33.3 W	Single	650 V	1.9 V	14 A	100 nA	20 V