1 Produkt
| Bild | Modell | Preis | Anzahl | Lager | Hersteller | Beschreibung | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Pd - Power Dissipation | Collector- Emitter Voltage VCEO Max | Collector-Emitter Saturation Voltage | Continuous Collector Current at 25 C | Gate-Emitter Leakage Current | Maximum Gate Emitter Voltage | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
Ein Angebot |
630
Verfügbar auf Lager
|
Fairchild Semiconductor | IGBT Transistors 650V FS Trench for IPL Application | Through Hole | TO-220F | + 150 C | Tube | 30 W | 650 V | 1.88 V | 170 A | 400 nA | 25 V |
1 / 1 Seite
