Modell	Preis	Anzahl		Lager	Hersteller	Beschreibung	Mounting Style	Package / Case	Maximum Operating Temperature	Packaging	Pd - Power Dissipation	Configuration	Collector- Emitter Voltage VCEO Max	Collector-Emitter Saturation Voltage	Continuous Collector Current at 25 C	Gate-Emitter Leakage Current	Maximum Gate Emitter Voltage
IKA08N65H5	1+ $0.7000 10+ $0.5960 100+ $0.4760 500+ $0.4160	Ein Angebot	PDF RFQ	500 Verfügbar auf Lager	Infineon Technologies	IGBT Transistors IGBT PRODUCTS	Through Hole	TO-220-3	+ 175 C	Tube	31.2 W	Single	650 V	1.65 V	10.8 A	100 nA	20 V
IKA08N65F5XKSA1	1+ $0.7000 10+ $0.5960 100+ $0.4760 500+ $0.4160	Ein Angebot	PDF RFQ	500 Verfügbar auf Lager	Infineon Technologies	IGBT Transistors IGBT PRODUCTS	Through Hole	TO-220-3	+ 175 C	Tube	31.2 W	Single	650 V	1.9 V	10.8 A	100 nA	20 V
IKA08N65H5XKSA1	1+ $0.7000 10+ $0.5960 100+ $0.4760 500+ $0.4160	Ein Angebot	PDF RFQ	500 Verfügbar auf Lager	Infineon Technologies	IGBT Transistors IGBT PRODUCTS	Through Hole	TO-220-3	+ 175 C	Tube	31.2 W	Single	650 V	1.65 V	10.8 A	100 nA	20 V
IKA08N65F5	1+ $0.7000 10+ $0.5960 100+ $0.4760 500+ $0.4160	Ein Angebot	PDF RFQ	500 Verfügbar auf Lager	Infineon Technologies	IGBT Transistors ENGINEERING SAMPLES TRENCHSTOP...	Through Hole	TO-220-3	+ 175 C	Tube	31.2 W	Single	650 V	1.9 V	10.8 A	100 nA	20 V